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J310

Vishay Intertechnology

J310 by Vishay Intertechnology

Vishay Intertechnology's J310 is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage. Ideal for ULTRA HIGH FREQUENCY SWITCHING applications, it features a SINGLE configuration and DEPLETION MODE operation. The transistor has 3 WIRE terminals, SILICON element material, and 2.5 pF Crss feedback capacitance in a CYLINDRICAL package.

Median Price

$5.830

Lifecycle Status

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Mouser Electronics

USA . 650 parts In-Stock

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CDM Electronics

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Nova Conductors

Japan . 100 parts In-Stock

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Digiode

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DF Sales Co.

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American Microsemiconductor Inc.

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J & M Industries LLC

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Sunrise Surplus Inc.

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Speed Components Ltd

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Digital Electronic Gebert Verwaltungs UG

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Corohmni

South Africa . 156 parts In-Stock

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Continental Prestige Electronics

USA . 6,999 parts In-Stock

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Argo Parts USA

USA . 4,289 parts In-Stock

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Netroflash

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Aztec Data Supply Inc.

USA . 673 parts In-Stock

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Advanced Electronics

New Zealand . 52 parts In-Stock

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Semicontronic

India . 241 parts In-Stock

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Corphita

USA . 3,896 parts In-Stock

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AZTECH Wire

Italy . 472 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

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Supply Digital

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Glotronic Ltd.

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SupplyDigital Components

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UHIMA Technologies

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Problanco Electronics

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Robosynatics

Brazil . 150 parts In-Stock

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Lucentia Tech

USA . 150 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 119 parts In-Stock

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Overview

Enhance your electronic projects with the J310 RF Small Signal Field Effect Transistor from Vishay Intertechnology. Known for their superior quality and reliability, Vishay Intertechnology products are trusted by professionals worldwide. The J310 is perfect for switching applications in the ultra-high-frequency band, offering high performance and efficiency. Take your projects to the next level with the precision and value that only Vishay Intertechnology can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally have higher electron mobility and faster switching speeds compared to P-channel FETs, making them suitable for high-frequency applications.

Configuration: SINGLE

Simplifies circuit design and integration into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing reliable and efficient performance in such scenarios.

Minimum DS Breakdown Voltage: 25 V

The high breakdown voltage allows the transistor to withstand high voltage conditions, increasing its versatility in various circuits.

Package Shape: ROUND

The round shape facilitates easier mounting and connection in circular housing designs.

Terminal Form: WIRE

Wire terminals provide a secure and reliable connection for efficient signal transmission.

Operating Mode: DEPLETION MODE

Depletion mode operation allows for easy control and manipulation of the transistor's conductivity, enabling precise switching capabilities.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for ultra high-frequency applications where fast signal processing and transmission are required.

No. of Terminals: 3

The 3-terminal configuration simplifies circuit connections and allows for easy integration into electronic systems.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact and space-saving design for efficient use in small electronic devices.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers high performance and reliability in various electronic applications.

Transistor Element Material: SILICON

Silicon-based transistors offer excellent thermal stability and electrical characteristics for reliable performance.

Terminal Finish: TIN LEAD

Tin lead finish provides corrosion resistance and ensures consistent electrical conductivity for long-term use.

Terminal Position: BOTTOM

Bottom terminal position allows for easier and more secure mounting on circuit boards.

Maximum Feedback Capacitance (Crss): 2.5 pF

Low feedback capacitance minimizes signal distortion and improves overall signal quality in high-frequency applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) J310 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

LOW NOISE

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

2.5 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

J310 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

4920-00-455-3072, 4920004553072, 5315-33-000-3097, 5315330003097, 5961-01-333-8978, 5961013338978, 5961-01-193-5715, 5961011935715, 6545-01-299-5640, 6545012995640

NIIN

004553072, 330003097, 013338978, 011935715, 012995640

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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