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2N4220A

Texas Instruments

2N4220A by Texas Instruments

2N4220A by Texas Instruments is an N-CHANNEL FET with a max power dissipation of 0.3W, ideal for switching applications. Featuring a cylindrical package style and junction technology, it operates at up to 200°C temperature. The transistor has 4 terminals in a round metal package body for isolated case connection.

Median Price

$20.350

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 118 parts In-Stock

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$20.350

100+ parts

$13.130

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$12.430

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118

$20.350

$13.130

$12.430

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Distributors (In-Stock)

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Freelance Electronics

USA . 1 parts In-Stock

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$3.653

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$3.653

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Bristol Electronics

USA . 2 parts In-Stock

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$8.960

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$8.960

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Digiode

USA . 8,785 parts In-Stock

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$10.916

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$10.916

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TEDSS.com

USA . 331 parts In-Stock

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$10.990

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Vyrian

USA . 6,520 parts In-Stock

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$11.490

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$11.490

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American Microsemiconductor Inc.

USA . 64 parts In-Stock

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$11.500

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Anansix

USA . 1,533 parts In-Stock

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NAC Semi

USA . 37 parts In-Stock

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LWI Electronics Inc

India . 36 parts In-Stock

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Q Components

USA . 24 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 20 parts In-Stock

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Holdelec - ElecDif-Pro

France . 20 parts In-Stock

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Pride Electronics

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PUI

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Lakeview Electronics

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Distributors (Availability)

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Parana Technologies

USA . 966 parts In-Stock

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$0.956

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$1.858

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966

$0.956

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$1.858

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DigiPath Technology Company

USA . 585 parts In-Stock

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$1.053

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$0.968

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585

$1.053

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ChromeModa Solutions

Germany . 2,395 parts In-Stock

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$1.074

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$0.881

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2,395

$1.074

$0.881

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IDEA Electronic Components Group

UK . 667 parts In-Stock

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$1.074

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$0.967

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$1.074

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Northwest PG Solutions

USA . 2,785 parts In-Stock

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$2.557

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Corphita

USA . 8,826 parts In-Stock

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$10.341

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Glotronic Ltd.

UK . 2,900 parts In-Stock

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Supply Digital

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UNI Independent Distributors

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Native Components

USA . 1,442 parts In-Stock

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$2.255

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Perfect Parts

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Assy Fe

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Overview

Upgrade your electronic circuits with the high-quality 2N4220A RF Small Signal Field Effect Transistor by Texas Instruments. This N-CHANNEL transistor is perfect for switching applications, offering superior performance and reliability. With a maximum power dissipation of 0.3 W and a maximum operating temperature of 200°C, this transistor is designed to withstand even the most demanding conditions. Trust Texas Instruments to deliver cutting-edge technology and unmatched quality in every component. Elevate your projects with the 2N4220A and experience the difference Texas Instruments brings to the table.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides excellent thermal conductivity, allowing for efficient heat dissipation during operation.

Polarity or Channel Type: N-CHANNEL

N-Channel type transistors typically have lower ON resistance and higher mobility, making them ideal for high-speed switching applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making it easier to integrate into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and fast switching performance in various electronic circuits.

Package Shape: ROUND

Round package shape offers easy mounting and prevents corner stress, ensuring better reliability in different mounting environments.

Terminal Form: WIRE

Wire terminals provide a secure connection and can be easily soldered onto the circuit board, simplifying the assembly process.

No. of Terminals: 4

Having 4 terminals allows for more connections and flexibility in circuit design, enabling versatility in different applications.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3W, this transistor can handle higher power levels without overheating, ensuring reliability in operation.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides compact size and easy integration, making it suitable for applications where space is limited.

Field Effect Transistor Technology: JUNCTION

Junction technology offers low leakage current and high switching speed, making it ideal for high-frequency applications.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200°C, this transistor can perform reliably in harsh operating conditions without compromising performance.

Transistor Element Material: SILICON

Silicon material provides good thermal stability and low noise operation, ensuring consistent performance over a wide temperature range.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB mounting and soldering, facilitating efficient assembly and maintenance.

Case Connection: ISOLATED

Isolated case connection helps in reducing interference and noise in the circuit, ensuring better signal integrity and performance.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N4220A attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Configuration:

Field Effect Transistor Technology:

JUNCTION

JEDEC-95 Code:

TO-72

JESD-30 Code:

O-MBCY-W4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N4220A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-083-2688, 5961000832688, 5961-14-305-7888, 5961143057888

NIIN

000832688, 143057888

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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