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SHF-0189

Rf Micro Devices

SHF-0189 by Rf Micro Devices

SHF-0189 by Rf Micro Devices is an N-channel RF FET for switching applications. It features a min DS breakdown voltage of 9V, power gain of 12dB, and operates in depletion mode. With a max drain current of 0.384A and operating temperature up to 85°C, it is ideal for C band frequency applications.

Median Price

$33.100

Lifecycle Status

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American Microsemiconductor Inc.

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Aztec Data Supply Inc.

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Overview

Unleash the power of cutting-edge technology with the SHF-0189 by Rf Micro Devices. As a leader in RF Small Signal Field Effect Transistors, Rf Micro Devices delivers top-quality products that excel in switching applications. With a focus on performance and reliability, this N-CHANNEL transistor offers a maximum drain current of 0.2A and a minimum power gain of 12dB. Whether you're in the aerospace, defense, or telecommunications industry, the SHF-0189 is your go-to solution for seamless operation in the C Band frequency range. Elevate your projects with the unmatched value and benefits of Rf Micro Devices' innovative transistor technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective material for packaging, ensuring reliable performance and protection for the FET.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better conductivity and switching characteristics compared to P-channel FETs, making them suitable for high-performance applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance when used for this purpose.

Surface Mount: YES

Ideal for compact designs and PCB mounting, making it suitable for small form factor applications.

Minimum DS Breakdown Voltage: 9 V

With a minimum breakdown voltage of 9V, this FET can handle higher voltages, providing a wider operational range.

Minimum Power Gain (Gp): 12 dB

Higher power gain allows for amplification and signal processing without significant signal loss, enhancing overall performance.

Package Shape: RECTANGULAR

Efficient use of space on the PCB, enabling compact and streamlined designs.

Terminal Form: FLAT

Flat terminals ensure secure connections and easy soldering during assembly, improving reliability.

Operating Mode: DEPLETION MODE

Depletion mode FETs offer precise control over current flow, making them suitable for various applications that require accurate switching.

Highest Frequency Band: C BAND

Designed to operate in the C band frequency range, making it suitable for high-frequency applications such as satellite communication and radar systems.

Maximum Drain Current (Abs) (ID): 0.384 A

Capable of handling higher drain currents, ensuring robust performance under demanding operating conditions.

No. of Terminals: 3

Simplifies connections in the circuit and reduces the complexity of the overall design.

Package Style (Meter): SMALL OUTLINE

Small outline package design saves space on the PCB, making it ideal for compact electronics applications.

Field Effect Transistor Technology: HETERO-JUNCTION

Hetero-junction technology offers improved efficiency and performance compared to traditional FET technologies.

Maximum Power Dissipation Ambient: 3.5 W

Can dissipate heat effectively, ensuring reliable operation even under high-power conditions.

Maximum Operating Temperature: 85 °C

Can operate at elevated temperatures without compromising performance, suitable for a wide range of environmental conditions.

Transistor Element Material: GALLIUM ARSENIDE

Gallium arsenide material offers high electron mobility, providing excellent performance in high-frequency applications.

Maximum Drain Current (ID): 0.2 A

Capable of handling moderate drain currents, suitable for a range of low to medium power applications.

Terminal Position: SINGLE

Single terminal position simplifies circuit layout and connections, enhancing ease of use.

Moisture Sensitivity Level (MSL): 2

MSL 2 indicates moderate sensitivity to moisture, suitable for handling and storage in typical manufacturing environments.

Case Connection: SOURCE

Source connected case ensures proper grounding and efficient heat dissipation, improving overall performance and reliability.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) SHF-0189 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Rf Micro Devices

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

9 V

Maximum Drain Current (Abs) (ID):

.384 A

Maximum Drain Current (ID):

.2 A

Field Effect Transistor Technology:

HETERO-JUNCTION

Highest Frequency Band:

C BAND

JESD-30 Code:

R-PSSO-F3

Moisture Sensitivity Level (MSL):

2

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

85 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

3.5 W

Minimum Power Gain (Gp):

12 dB

Qualification:

Not Qualified

Sub-Category:

FET RF Small Signal

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

SHF-0189 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

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