Loading...

3N128

Texas Instruments

3N128 by Texas Instruments

3N128 by Texas Instruments is a N-CHANNEL FET with 20V DS Breakdown Voltage, 13.5 dB Power Gain, and 0.05A Drain Current. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND due to its DEPLETION MODE operation and METAL-OXIDE SEMICONDUCTOR technology.

Median Price

$24.735

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 13 parts In-Stock

1+ parts

$14.250

100+ parts

$9.619

1k+ parts

-

10k+ parts

-

13

$14.250

$9.619

-

-

American Microsemiconductor Inc.

USA . 699 parts In-Stock

1+ parts

$35.220

100+ parts

-

1k+ parts

-

10k+ parts

-

699

$35.220

-

-

-

Vyrian

USA . 8,345 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,345

-

-

-

-

Digiode

USA . 1,502 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,502

-

-

-

-

Pegasus Components GmbH

Germany . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Prism Electronics

USA . 92 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

92

-

-

-

-

MISTER SPROCKETS

USA . 74 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

74

-

-

-

-

EMSNET

USA . 53 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

53

-

-

-

-

Fibra_Brandt Electronic GMBH

Germany . 30 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

30

-

-

-

-

Electronics Depot

USA . 22 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

22

-

-

-

-

LWI Electronics Inc

India . 19 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

19

-

-

-

-

Lakeview Electronics

USA . 9 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9

-

-

-

-

Electronic Expediters

USA . 7 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7

-

-

-

-

LittleDiode

UK . 5 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5

-

-

-

-

ComSIT Distribution GmbH

Germany . 4 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4

-

-

-

-

Corel Iberica Componentes, S.L.

Spain . 4 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4

-

-

-

-

ECAB

Sweden . 2 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 982 parts In-Stock

1+ parts

$0.992

100+ parts

-

1k+ parts

$1.878

10k+ parts

-

982

$0.992

-

$1.878

-

DigiPath Technology Company

USA . 1,730 parts In-Stock

1+ parts

$1.093

100+ parts

-

1k+ parts

-

10k+ parts

-

1,730

$1.093

-

-

-

ChromeModa Solutions

Germany . 6,371 parts In-Stock

1+ parts

$1.115

100+ parts

$0.914

1k+ parts

-

10k+ parts

-

6,371

$1.115

$0.914

-

-

IDEA Electronic Components Group

UK . 1,611 parts In-Stock

1+ parts

$1.115

100+ parts

-

1k+ parts

$1.004

10k+ parts

-

1,611

$1.115

-

$1.004

-

Corohmni

South Africa . 376 parts In-Stock

1+ parts

$1.654

100+ parts

-

1k+ parts

-

10k+ parts

-

376

$1.654

-

-

-

AZTECH Wire

Italy . 288 parts In-Stock

1+ parts

$5.838

100+ parts

-

1k+ parts

-

10k+ parts

-

288

$5.838

-

-

-

One Stop Electronics

USA . 447 parts In-Stock

1+ parts

$25.050

100+ parts

-

1k+ parts

-

10k+ parts

-

447

$25.050

-

-

-

Native Components

USA . 948 parts In-Stock

1+ parts

$33.334

100+ parts

-

1k+ parts

-

10k+ parts

$32.000

948

$33.334

-

-

$32.000

Northwest PG Solutions

USA . 1,226 parts In-Stock

1+ parts

$36.667

100+ parts

-

1k+ parts

-

10k+ parts

-

1,226

$36.667

-

-

-

Corphita

USA . 3,050 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,050

-

-

-

-

Perfect Parts

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Assy Fe

Spain . 11 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11

-

-

-

-

RTC Component Inc.

USA . 6 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6

-

-

-

-

Overview

Elevate your amplifier performance with the 3N128 RF Small Signal Field Effect Transistor by Texas Instruments. Designed with precision and quality in mind, this N-CHANNEL transistor offers exceptional power gain and very high frequency band capabilities. Whether you're amplifying signals for communication systems or radar applications, the 3N128 provides reliable and efficient performance. Trust in Texas Instruments to deliver top-notch technology that meets your needs and exceeds expectations. Experience the value and benefits of superior quality with the 3N128.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages provide excellent thermal conductivity, ensuring efficient heat dissipation and overall reliability of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower ON resistance and higher electron mobility, making them suitable for high performance applications.

Minimum DS Breakdown Voltage: 20 V

The high breakdown voltage allows for reliable operation in circuits where high voltages may be present, enhancing the durability of the transistor.

Minimum Power Gain (Gp): 13.5 dB

The high power gain indicates efficient amplification capabilities, ensuring accurate signal amplification in amplifier applications.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this transistor can withstand high temperature environments without compromising performance, making it suitable for a wide range of applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 3N128 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Case Connection:

SUBSTRATE

Configuration:

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.05 A

Maximum Drain Current (ID):

.05 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.35 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-72

JESD-30 Code:

O-MBCY-W4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

13.5 dB

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

3N128 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-883-6389, 5961008836389

NIIN

008836389

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

New products
from Texas Instruments 7

Similar products 2