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TGF4250-SCC

Texas Instruments

TGF4250-SCC by Texas Instruments

TGF4250-SCC by Texas Instruments is a RF FET with 6V DS breakdown voltage, operating in depletion mode for KU band applications. Utilizes GaAs technology in rectangular package, surface mountable as unencased chip with 4 terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,786 parts In-Stock

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6,786

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Digiode

USA . 1,192 parts In-Stock

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1,192

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Sea View Technologies

USA . 126 parts In-Stock

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126

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Bristol Electronics

USA . 126 parts In-Stock

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126

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,014 parts In-Stock

1+ parts

$0.724

100+ parts

-

1k+ parts

$1.745

10k+ parts

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2,014

$0.724

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$1.745

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DigiPath Technology Company

USA . 365 parts In-Stock

1+ parts

$0.797

100+ parts

$0.733

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365

$0.797

$0.733

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ChromeModa Solutions

Germany . 4,100 parts In-Stock

1+ parts

$0.813

100+ parts

$0.667

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4,100

$0.813

$0.667

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IDEA Electronic Components Group

UK . 577 parts In-Stock

1+ parts

$0.813

100+ parts

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$0.732

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577

$0.813

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$0.732

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One Stop Electronics

USA . 1,430 parts In-Stock

1+ parts

$14.050

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1,430

$14.050

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AZTECH Wire

Italy . 240 parts In-Stock

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$17.916

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240

$17.916

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Corphita

USA . 1,210 parts In-Stock

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1,210

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Overview

Experience top-notch performance with the TGF4250-SCC by Texas Instruments, a leading manufacturer in RF Small Signal Field Effect Transistors. This surface mount transistor offers unparalleled quality and reliability, making it perfect for applications in the KU band frequency range. With a minimum DS breakdown voltage of 6V and advanced gallium arsenide technology, this product delivers exceptional value and benefits to customers seeking high-performance solutions for their electronic projects. Trust Texas Instruments for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Surface Mount: YES

Makes it easy to mount and reduces the need for additional hardware, saving space and simplifying the manufacturing process.

Minimum DS Breakdown Voltage: 6 V

Higher breakdown voltage provides better reliability and protection against voltage spikes, ensuring long-term performance and stability.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space on circuit boards and enables easier placement and routing of components.

Terminal Form: NO LEAD

No lead terminals reduce the risk of solder bridging and enable a more compact design, enhancing the overall performance and durability.

Operating Mode: DEPLETION MODE

Depletion mode operation allows for better control over the device characteristics, leading to improved performance in specific applications.

Highest Frequency Band: KU BAND

Designed for operation in the KU band frequency range, suitable for various high-frequency applications including satellite communication and radar systems.

No. of Terminals: 4

Four terminals provide flexibility in circuit design and enable more complex functionality, making it suitable for a wide range of applications.

Package Style (Meter): UNCASED CHIP

Uncased chip package style offers versatility in mounting options and allows for direct integration into the circuit, enhancing performance and reliability.

Field Effect Transistor Technology: HETERO-JUNCTION

Hetero-junction technology enables higher efficiency and lower noise operation, making it a preferred choice for RF applications where performance is critical.

Transistor Element Material: GALLIUM ARSENIDE

Gallium Arsenide material offers high electron mobility and low noise characteristics, ideal for high-frequency RF applications requiring excellent performance.

Terminal Position: UPPER

Upper terminal position facilitates easier connection and routing of external components, enhancing the overall ease of use and integration in the circuit.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) TGF4250-SCC attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Minimum DS Breakdown Voltage:

6 V

Field Effect Transistor Technology:

HETERO-JUNCTION

Highest Frequency Band:

KU BAND

JESD-30 Code:

R-XUUC-N4

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

UNCASED CHIP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

TGF4250-SCC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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