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SST310-T1-E3

Vishay Intertechnology

SST310-T1-E3 by Vishay Intertechnology

Vishay Intertechnology's SST310-T1-E3 is an N-CHANNEL RF FET for ULTRA HIGH FREQUENCY SWITCHING. With a 25V DS Breakdown Voltage, it operates in DEPLETION MODE. The PLASTIC/EPOXY package with GULL WING terminals and Matte Tin finish makes it suitable for SMALL OUTLINE applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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J2 Sourcing AB

Sweden . 942 parts In-Stock

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Vyrian

USA . 512 parts In-Stock

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512

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Nova Conductors

Japan . 88 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 271 parts In-Stock

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$0.953

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Corohmni

South Africa . 271 parts In-Stock

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$1.845

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$2.148

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$1.955

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$1.761

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$2.148

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AZTECH Wire

Italy . 412 parts In-Stock

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$17.438

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Ampacity Inc.

Singapore . 1,170 parts In-Stock

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$51.050

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Continental Prestige Electronics

USA . 6,947 parts In-Stock

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Assy Fe

Spain . 6,930 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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Perfect Parts

USA . 2,572 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1,148 parts In-Stock

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Argo Parts USA

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Aranea Global

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Overview

Elevate your RF small signal applications with the Vishay Intertechnology SST310-T1-E3. Crafted with precision and quality, this N-CHANNEL FET boasts ultra-high frequency capabilities and a robust single configuration for seamless switching operations. Its matte tin finish ensures durability, while its small outline package offers versatility for various designs. Trust in Vishay Intertechnology's expertise to deliver top-notch performance and reliability. Upgrade your projects today with the SST310-T1-E3 and experience the difference in quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, perfect for portable applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance characteristics compared to P-channel FETs, making this product a good choice for high-speed switching applications.

Configuration: SINGLE

Single configuration FETs are simpler to work with and are often more cost-effective, making this product a practical choice for various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this product offers excellent performance and reliability in such use cases.

Surface Mount: YES

Being surface mountable allows for easy integration into PCB designs, making this product suitable for compact electronic devices.

Minimum DS Breakdown Voltage: 25 V

With a minimum breakdown voltage of 25V, this FET can handle higher voltages without failing, making it suitable for a wide range of applications.

Field Effect Transistor Technology: JUNCTION

Junction FETs typically offer lower noise and higher input impedance, making this product a good choice for high-frequency applications.

Terminal Finish: Matte Tin (Sn)

Matte tin finish on the terminals provides good conductivity and solderability, ensuring reliable connections in electronic circuits.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) SST310-T1-E3 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

LOW NOISE

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SST310-T1-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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