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BF545C-TAPE-13

NXP Semiconductors

BF545C-TAPE-13 by NXP Semiconductors

BF545C-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,761 parts In-Stock

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3,761

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Vyrian

USA . 3,189 parts In-Stock

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3,189

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Anansix

USA . 427 parts In-Stock

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427

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One Stop Electronics

USA . 1,003 parts In-Stock

1+ parts

$59.050

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1,003

$59.050

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UNI Independent Distributors

Spain . 3,345 parts In-Stock

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3,345

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Northwest PG Solutions

USA . 2,145 parts In-Stock

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Corphita

USA . 1,644 parts In-Stock

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1,644

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Native Components

USA . 225 parts In-Stock

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Overview

Elevate your designs with the BF545C-TAPE-13 from NXP Semiconductors, a leader in innovative solutions. This high-quality N-channel RF Small Signal FET excels in amplification applications, delivering impressive performance even at very high frequencies. With its compact, surface-mount design and robust thermal capabilities, it ensures reliability for various electronic projects. Choose NXP for unparalleled quality, efficiency, and peace of mind in every application!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures reliability and resistance to environmental stressors, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally provide better performance, higher efficiency, and faster switching speeds, making them ideal for amplification applications.

Configuration: SINGLE

A single configuration simplifies design and integration, reducing complexity in circuit layouts for both prototyping and production.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this FET is optimized for low noise and high gain performance in audio and RF applications.

Surface Mount: YES

Surface mount capability allows for automated assembly processes, leading to more compact designs and lower production costs.

Minimum DS Breakdown Voltage: 30 V

The 30V breakdown voltage enhances versatility, allowing it to handle a variety of applications without the risk of damage from voltage spikes.

Package Shape: RECTANGULAR

The rectangular package shape facilitates optimal placement on PCBs, optimizing space utilization in compact electronic devices.

Terminal Form: GULL WING

Gull wing terminals improve soldering reliability and are easier to inspect, ensuring robust connections during assembly.

Operating Mode: DEPLETION MODE

Depletion mode operation allows for lower power consumption when in a static state, making it energy-efficient for battery-powered applications.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Designed for very high frequencies, this FET can be used in advanced RF applications, including wireless communication, enhancing signal integrity.

No. of Terminals: 3

The three-terminal design simplifies connection and integration within circuits, allowing for easy implementation in various designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style ensures minimal space requirement on PCBs, making it a great choice for compact electronic devices.

Field Effect Transistor Technology: JUNCTION

Junction technology provides high reliability and stability, with good thermal performance under varying conditions.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures ensures that this FET can be used in demanding environments without compromising performance.

Transistor Element Material: SILICON

Silicon is a preferred material in transistors due to its excellent electrical properties and broad availability, supporting reliable operation.

Terminal Position: DUAL

Dual terminal positioning offers flexibility in design and layout, accommodating various circuit configurations for optimal performance.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF545C-TAPE-13 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF545C-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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