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BF545B

NXP Semiconductors

BF545B by NXP Semiconductors

The NXP Semiconductors BF545B is an N-CHANNEL RF FET for switching applications. Operating in DEPLETION MODE, it offers a 30V DS Breakdown Voltage and operates in the VERY HIGH FREQUENCY BAND. With a max power dissipation of 0.25W, this transistor is ideal for small outline packages in high-frequency circuits.

Median Price

$0.241

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 1,000 parts In-Stock

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Chip Stock

USA . 2,715 parts In-Stock

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J2 Sourcing AB

Sweden . 2,185 parts In-Stock

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Anansix

USA . 2,119 parts In-Stock

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Digiode

USA . 1,972 parts In-Stock

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Vyrian

USA . 1,338 parts In-Stock

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VNN

France . 1,227 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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Argo Parts USA

USA . 1,439 parts In-Stock

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$0.234

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Aztec Data Supply Inc.

USA . 3,111 parts In-Stock

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$0.490

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Corohmni

South Africa . 337 parts In-Stock

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One Stop Electronics

USA . 1,003 parts In-Stock

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Semicontronic

India . 1,114 parts In-Stock

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$13.050

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$12.724

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$12.658

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AZTECH Wire

Italy . 503 parts In-Stock

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Lixinc

USA . 16,792 parts In-Stock

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UNI Independent Distributors

Spain . 7,990 parts In-Stock

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Corphita

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Kepictronics

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Alle Elektronik GmbH

Germany . 2,334 parts In-Stock

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Overview

Elevate your RF signal performance with the BF545B from NXP Semiconductors. As a leader in semiconductor technology, NXP delivers top-quality products that exceed industry standards. The BF545B is a versatile N-channel FET transistor suitable for switching applications in the very high-frequency band. With a sleek small outline package and high power dissipation, this transistor offers exceptional value and reliability for your electronic projects. Upgrade your designs with the BF545B and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body makes this FET lightweight and cost-effective while providing reliable protection for the internal components.

Polarity or Channel Type: N-CHANNEL

N-channel FETs offer lower ON resistance and higher current handling capabilities, making them suitable for high-performance applications.

Configuration: SINGLE

The single configuration allows for simple and straightforward circuit designs, making this FET easier to use for various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET provides fast response times and high efficiency in converting signals.

Surface Mount: YES

With surface mount capability, this FET can be easily integrated onto PCBs, saving space and simplifying assembly processes.

Minimum DS Breakdown Voltage: 30 V

The high minimum breakdown voltage ensures that this FET can handle higher voltage levels, adding to its versatility in different circuits.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of board space and easy placement on PCB layouts.

Terminal Form: GULL WING

The gull wing terminal form provides strong mechanical connections, ensuring reliable performance in various operating conditions.

Operating Mode: DEPLETION MODE

Operating in depletion mode allows for easy control of the FET’s conductivity, enabling precise regulation of current flow.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Operating in the very high frequency band, this FET is ideal for high-speed applications requiring rapid signal processing.

No. of Terminals: 3

Having 3 terminals allows for versatile connectivity options and flexibility in circuit configurations.

Maximum Power Dissipation (Abs): 0.25 W

With a high maximum power dissipation rating, this FET can handle heavy loads and operate reliably under demanding conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves PCB space, making this FET suitable for compact designs and applications with size constraints.

Field Effect Transistor Technology: JUNCTION

Employing junction technology, this FET delivers high performance and reliability in a variety of circuit applications.

Maximum Operating Temperature: 150 °C

Operating at temperatures up to 150°C, this FET can withstand high-temperature environments without compromising performance.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high switching speeds and low ON resistance for efficient signal processing.

Terminal Finish: Tin (Sn)

The tin terminal finish provides good solderability and corrosion resistance, enhancing the FET’s longevity and performance.

Terminal Position: DUAL

The dual terminal position allows for flexible mounting options and easy integration into a wide range of circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30 seconds, this FET can undergo reflow soldering processes efficiently and reliably.

Peak Reflow Temperature °C: 260

The high peak reflow temperature capability of 260°C ensures proper soldering and assembly of the FET onto PCBs.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF545B attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BF545B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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