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BF545B-TAPE-7

NXP Semiconductors

BF545B-TAPE-7 by NXP Semiconductors

BF545B-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,702 parts In-Stock

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4,702

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Digiode

USA . 3,012 parts In-Stock

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3,012

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Anansix

USA . 2,102 parts In-Stock

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2,102

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Distributors (Availability)

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Northwest PG Solutions

USA . 1,816 parts In-Stock

1+ parts

$3.470

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1,816

$3.470

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One Stop Electronics

USA . 1,253 parts In-Stock

1+ parts

$5.050

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1,253

$5.050

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Corphita

USA . 4,801 parts In-Stock

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4,801

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UNI Independent Distributors

Spain . 877 parts In-Stock

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877

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Native Components

USA . 551 parts In-Stock

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$3.060

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551

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$3.060

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Overview

Unlock the power of advanced technology with the BF545B-TAPE-7 from NXP Semiconductors. This high-quality RF Small Signal FET delivers exceptional performance for your amplification needs, ensuring reliability and efficiency in various applications. Backed by NXP’s commitment to innovation and excellence, this compact device is designed for seamless integration into your projects, providing unmatched value and superior functionality. Elevate your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body enhances durability and provides excellent protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are generally more efficient than P-channel FETs, offering higher electron mobility and lower on-state resistance, making this product an optimal choice for low power loss applications.

Configuration: SINGLE

A single configuration simplifies circuit design, making it easier to integrate into compact devices while maintaining performance.

Transistor Application: AMPLIFIER

Suitable for amplifier applications, this FET can deliver high gain, making it ideal for audio and RF amplification tasks.

Surface Mount: YES

The surface mount capability allows for automated assembly and placement on PCBs, reducing manufacturing costs and improving reliability.

Minimum DS Breakdown Voltage: 30 V

With a minimum drain-source breakdown voltage of 30V, this FET can be used in a variety of circuits without the risk of breakdown under normal operating conditions.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on PCBs, allowing for more efficient layout and better integration into compact electronic devices.

Terminal Form: GULL WING

Gull wing terminals facilitate reliable soldering, ensuring strong connections and making it easier to inspect the solder joints during manufacturing.

Operating Mode: DEPLETION MODE

Depletion mode FETs allow for lower power consumption in certain applications, enabling energy-efficient designs.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

This FET's capability to operate in very high frequency bands makes it suitable for RF applications, including RF amplifiers and mixers.

No. of Terminals: 3

Having three terminals simplifies circuit connections, making it user-friendly for designers and engineers.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space in electronic designs, ideal for compact systems without sacrificing performance.

Field Effect Transistor Technology: JUNCTION

Junction FET technology ensures stable operation and reliability, making this product a trusted choice in various electronic applications.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C ensures this FET can operate reliably in high-temperature environments, which is critical for industrial and automotive applications.

Transistor Element Material: SILICON

Silicon as the elemental material provides excellent semiconductor properties, making this FET a robust choice for a wide range of applications.

Terminal Position: DUAL

The dual terminal position allows for greater flexibility in circuit board design, enhancing compatibility with various layouts.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF545B-TAPE-7 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF545B-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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