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BF545B,215

NXP Semiconductors

BF545B,215 by NXP Semiconductors

BF545B,215 by NXP Semiconductors is an N-CHANNEL RF Small Signal FET with a DEPLETION MODE. It operates in the VERY HIGH FREQUENCY BAND and has a 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications, this transistor comes in a PLASTIC/EPOXY package with GULL WING terminals.

Median Price

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Lifecycle Status

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7

In-Stock Inventory

1k+

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Vyrian

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Bristol Electronics

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PC Components Company LLC

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Nova Conductors

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Ampacity Inc.

Singapore . 998 parts In-Stock

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One Stop Electronics

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AZTECH Wire

Italy . 426 parts In-Stock

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Argo Parts USA

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Overview

Enhance your amplifier projects with the BF545B,215 from NXP Semiconductors. This high-quality RF Small Signal Field Effect Transistor offers superior performance in a compact package, making it perfect for a wide range of applications. With N-CHANNEL polarity and DEPLETION MODE operation, this transistor provides reliable amplification in very high frequency bands. Trust NXP Semiconductors for cutting-edge technology and exceptional value in every component. Elevate your designs with the BF545B,215 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the transistor lightweight and durable, ideal for portable electronic devices.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are known for their high input impedance and low leakage current, making them suitable for amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Surface Mount: YES

The surface mount capability allows for easy and efficient PCB assembly, saving time and space in electronic designs.

Operating Mode: DEPLETION MODE

Depletion mode operation provides high input impedance and low distortion, making it ideal for audio amplifier circuits.

Maximum Power Dissipation (Abs): 0.25 W

With a maximum power dissipation of 0.25W, this transistor can handle moderate power levels without overheating or failing.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures reliable performance in a wide range of environmental conditions.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF545B,215 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF545B,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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