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BF545A-TAPE-13

NXP Semiconductors

BF545A-TAPE-13 by NXP Semiconductors

BF545A-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a min DS breakdown voltage of 30V, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,715 parts In-Stock

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4,715

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Anansix

USA . 2,859 parts In-Stock

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2,859

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Vyrian

USA . 102 parts In-Stock

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102

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Native Components

USA . 356 parts In-Stock

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$1.995

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356

$1.995

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Northwest PG Solutions

USA . 2,372 parts In-Stock

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$2.195

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2,372

$2.195

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One Stop Electronics

USA . 212 parts In-Stock

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$51.050

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212

$51.050

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UNI Independent Distributors

Spain . 7,107 parts In-Stock

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Corphita

USA . 1,536 parts In-Stock

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1,536

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Overview

Elevate your designs with the BF545A-TAPE-13 from NXP Semiconductors, a leading name in innovative RF solutions. This high-quality N-channel FET delivers exceptional performance for amplification applications, ensuring reliability and efficiency at very high frequencies. Its compact surface-mount package makes it ideal for space-constrained projects, empowering engineers to create cutting-edge technology that drives success. Experience the NXP advantage—where quality meets innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making the product reliable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are known for their higher electron mobility, which translates to faster switching speeds and better performance in amplifier applications.

Configuration: SINGLE

A single configuration simplifies design and integration into circuits, making it a space-saving and efficient choice for RF applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier use, this FET provides enhanced gain and performance in signal amplification scenarios.

Surface Mount: YES

The surface mount capability allows for compact circuit designs and easier automated assembly processes, reducing overall manufacturing costs.

Minimum DS Breakdown Voltage: 30 V

With a minimum drain-source breakdown voltage of 30 V, this FET is well-suited for high voltage applications, providing greater reliability and safety.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on PCBs, facilitating more compact designs without compromising performance.

Terminal Form: GULL WING

Gull wing terminals ensure good solderability and mechanical stability, which enhances the reliability of the connections in the final application.

Operating Mode: DEPLETION MODE

Depletion mode operation provides enhanced control over the current flow, making it ideal for precision applications where fine adjustments are necessary.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

The capability to operate in the very high-frequency band makes this FET suitable for RF applications, ensuring signal integrity and performance.

No. of Terminals: 3

Having three terminals simplifies circuit design and connectivity, allowing for easier integration into various electronic systems.

Package Style (Meter): SMALL OUTLINE

The small outline package style reduces the footprint on PCB layouts, providing flexibility in design and optimizing space for additional components.

Field Effect Transistor Technology: JUNCTION

Junction technology in FETs offers excellent thermal stability and performance, making this device reliable under varying temperature conditions.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C ensures that this FET can function reliably in demanding environments, enhancing its versatility.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures excellent electrical characteristics and reliability over a wide range of conditions.

Terminal Position: DUAL

With dual terminal positioning, this FET allows for flexibility in circuit layouts and easier integration into various electronic designs.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF545A-TAPE-13 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF545A-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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