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BF545B-TAPE-13

NXP Semiconductors

BF545B-TAPE-13 by NXP Semiconductors

BF545B-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,652 parts In-Stock

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Anansix

USA . 1,210 parts In-Stock

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Digiode

USA . 1,164 parts In-Stock

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One Stop Electronics

USA . 1,403 parts In-Stock

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$58.050

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$58.050

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UNI Independent Distributors

Spain . 6,081 parts In-Stock

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Corphita

USA . 2,233 parts In-Stock

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Northwest PG Solutions

USA . 1,415 parts In-Stock

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1,415

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Native Components

USA . 84 parts In-Stock

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Overview

Experience unparalleled performance with the BF545B-TAPE-13 from NXP Semiconductors, a leader in innovative RF technology. This high-quality N-channel FET is expertly designed for superior amplification in very high-frequency applications. With its compact surface mount package and exceptional reliability, it ensures optimal signal integrity and efficiency. Trust in NXP's commitment to excellence and elevate your projects with this versatile component, delivering outstanding value and performance every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy allows for lightweight and cost-effective packaging, making it suitable for a range of applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are typically more efficient and faster than their P-channel counterparts, making them a better choice for high-speed applications.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, providing flexibility in system architecture.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this FET is ideal for applications requiring effective signal boosting.

Surface Mount: YES

Surface mount technology enables compact designs and automation in assembly, enhancing manufacturing efficiency.

Minimum DS Breakdown Voltage: 30 V

A minimum breakdown voltage of 30V allows for reliable operation in various environments and protects against voltage spikes.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient use of space on PCBs and aids in easy placement during assembly.

Terminal Form: GULL WING

Gull wing terminals provide enhanced soldering surface area, improving connection reliability and manufacturability.

Operating Mode: DEPLETION MODE

Depletion mode operation allows for low power consumption and efficient control of current in application circuits.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Capable of operating in very high frequency bands, making it suitable for RF applications including communications and broadcasting.

No. of Terminals: 3

With three terminals, this FET supports versatile circuit configurations while maintaining design simplicity.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers compactness, enabling space-saving designs in consumer electronics and RF devices.

Field Effect Transistor Technology: JUNCTION

Junction technology contributes to better thermal performance and higher reliability in operation.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C ensures robustness and reliability in demanding environments.

Transistor Element Material: SILICON

Silicon as the element material enhances performance characteristics such as switching speed and thermal stability.

Terminal Position: DUAL

Dual terminal positioning allows for flexible integration into various circuit designs and layouts.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF545B-TAPE-13 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF545B-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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