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2N5949

Texas Instruments

2N5949 by Texas Instruments

2N5949 by Texas Instruments is an N-CHANNEL RF FET with a min DS Breakdown Voltage of 30V. It operates in DEPLETION MODE, has a Max Power Dissipation of 0.36W, and Max Operating Temperature of 150°C. This transistor is commonly used for SWITCHING applications due to its low feedback capacitance of 2pF.

Median Price

$8.165

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 9 parts In-Stock

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$6.330

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Ace Electronics

USA . 76 parts In-Stock

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$10.000

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Vyrian

USA . 6,346 parts In-Stock

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6,346

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Digiode

USA . 5,140 parts In-Stock

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Anansix

USA . 2,043 parts In-Stock

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2,043

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Electronic Expediters

USA . 162 parts In-Stock

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Prism Electronics

USA . 36 parts In-Stock

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36

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Component Electronics Inc.

Canada . 7 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 293 parts In-Stock

1+ parts

$1.404

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$2.109

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293

$1.404

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$2.109

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DigiPath Technology Company

USA . 1,017 parts In-Stock

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$1.545

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$1.422

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1,017

$1.545

$1.422

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IDEA Electronic Components Group

UK . 1,843 parts In-Stock

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$1.577

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$1.419

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1,843

$1.577

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$1.419

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ChromeModa Solutions

Germany . 909 parts In-Stock

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$1.577

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$1.293

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909

$1.577

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Northwest PG Solutions

USA . 890 parts In-Stock

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$3.075

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$3.075

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AZTECH Wire

Italy . 799 parts In-Stock

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$15.127

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One Stop Electronics

USA . 772 parts In-Stock

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$53.050

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Corphita

USA . 3,530 parts In-Stock

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Native Components

USA . 127 parts In-Stock

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$2.711

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Perfect Parts

USA . 40 parts In-Stock

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Overview

Discover the superior quality and reliability of the Texas Instruments 2N5949 RF Small Signal Field Effect Transistor. Perfect for switching applications, this N-CHANNEL transistor offers unmatched performance and precision. With a maximum power dissipation of 0.36 W and a minimum DS breakdown voltage of 30 V, this transistor provides exceptional value and efficiency. Whether used in telecommunications, radar systems, or medical equipment, the 2N5949 ensures optimal performance and durability. Trust Texas Instruments for cutting-edge technology and innovation in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components from damage, making the transistor suitable for various applications.

Polarity or Channel Type: N-CHANNEL

Offers high electron mobility and low on-state resistance, improving the efficiency of the transistor in switching applications.

Configuration: SINGLE

Simplifies the circuit design and allows for straightforward integration into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching operations, ensuring fast response times and reliable performance.

Minimum DS Breakdown Voltage: 30 V

Withstands high voltage levels, making it suitable for a wide range of applications where voltage protection is required.

Terminal Form: WIRE

Enables easy connection and soldering, facilitating installation and maintenance processes.

Operating Mode: DEPLETION MODE

Allows for easy control of the transistor's conductivity, enhancing its efficiency in specific applications.

Maximum Power Dissipation (Abs): 0.36 W

Can handle moderate power levels without overheating, ensuring long-term reliability.

Package Style (Meter): CYLINDRICAL

Offers a compact size and easy mounting options for space-constrained applications.

Field Effect Transistor Technology: JUNCTION

Provides high switching speeds and low power consumption, making it ideal for applications requiring efficiency.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation, ensuring reliability in industrial settings.

Transistor Element Material: SILICON

Delivers high performance and reliability, making the transistor suitable for a wide range of applications.

Terminal Position: BOTTOM

Facilitates easier mounting and connection, enhancing the overall ease of use of the transistor.

Maximum Feedback Capacitance (Crss): 2 pF

Provides low input capacitance, ensuring minimal signal distortion and improved high-frequency performance.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N5949 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Additional Features:

LOW NOISE

Configuration:

Minimum DS Breakdown Voltage:

30 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

2 pF

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N5949 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-292-9156, 5961012929156

NIIN

012929156

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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