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2N5952

Texas Instruments

2N5952 by Texas Instruments

2N5952 by Texas Instruments is an N-CHANNEL RF FET with 0.36W power dissipation. Ideal for SWITCHING applications, it operates up to 150°C and features a CYLINDRICAL package with 3 WIRE terminals.

Median Price

$13.250

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 493 parts In-Stock

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$13.250

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Vyrian

USA . 5,191 parts In-Stock

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Digiode

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VNN

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Anansix

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Bristol Electronics

USA . 1,080 parts In-Stock

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Atlantic Semiconductor

USA . 1,080 parts In-Stock

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Nova Conductors

Japan . 550 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 170 parts In-Stock

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Prism Electronics

USA . 152 parts In-Stock

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Electronic Expediters

USA . 80 parts In-Stock

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LittleDiode

UK . 7 parts In-Stock

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Ampacity Inc.

Singapore . 703 parts In-Stock

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$1.050

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703

$1.050

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Parana Technologies

USA . 1,007 parts In-Stock

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$1.732

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$2.313

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1,007

$1.732

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DigiPath Technology Company

USA . 259 parts In-Stock

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$1.907

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$1.755

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259

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ChromeModa Solutions

Germany . 2,076 parts In-Stock

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$1.946

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$1.596

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IDEA Electronic Components Group

UK . 1,683 parts In-Stock

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$1.946

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$1.751

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AZTECH Wire

Italy . 266 parts In-Stock

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$9.563

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One Stop Electronics

USA . 1,014 parts In-Stock

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Corohmni

South Africa . 152 parts In-Stock

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A-Z Elektronik GmbH

Germany . 8,809 parts In-Stock

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SupplyDigital Components

Austria . 8,046 parts In-Stock

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Kulean Microsystems

USA . 7,512 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

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Corphita

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Supply Digital

USA . 2,563 parts In-Stock

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Problanco Electronics

Mexico . 968 parts In-Stock

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Assy Fe

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UHIMA Technologies

Türkiye . 175 parts In-Stock

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Perfect Parts

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Aranea Global

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Overview

Enhance your electronic projects with the reliable 2N5952 RF Small Signal Field Effect Transistor by Texas Instruments. With a reputation for top-quality manufacturing, Texas Instruments delivers trusted components for a wide range of applications. The 2N5952 offers customers exceptional value and benefits, providing efficient switching capabilities in a sleek round package. Trust in Texas Instruments to bring you the superior performance you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the transistor lightweight and durable, which can be advantageous for portable electronic devices.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance and lower resistance compared to P-channel transistors, making them a good choice for high-frequency switching applications.

Configuration: SINGLE

Single configuration transistors are simpler to handle and require fewer connections, making them easier to integrate into circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power consumption, making it suitable for efficient power management.

Package Shape: ROUND

The round package shape allows for easy mounting and soldering onto circuit boards, providing a compact and space-saving solution.

Terminal Form: WIRE

Wire terminals offer flexibility in connecting the transistor to other components, enabling easy replacement or repair if needed.

No. of Terminals: 3

Having three terminals provides the necessary connections for the transistor to function as a switch in a circuit, offering versatility in design applications.

Maximum Power Dissipation (Abs): 0.36 W

With a maximum power dissipation of 0.36W, this transistor can handle moderate power levels without overheating, ensuring reliable performance under normal operating conditions.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact and versatile form factor, making it suitable for various electronic devices with space constraints.

Field Effect Transistor Technology: JUNCTION

Junction FET technology provides high input impedance and low output impedance, making this transistor ideal for amplification and switching applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments, ensuring reliable performance in challenging conditions.

Transistor Element Material: SILICON

Silicon transistors offer good thermal stability and high breakdown voltage, making them a durable and reliable choice for various electronic applications.

Terminal Position: BOTTOM

Having the terminals at the bottom of the transistor simplifies the mounting process and ensures proper connection to the circuit, enhancing overall reliability and performance.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N5952 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Additional Features:

LOW NOISE

Configuration:

Field Effect Transistor Technology:

JUNCTION

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N5952 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-013-2833, 5961010132833

NIIN

010132833

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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