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2N4222A

Texas Instruments

2N4222A by Texas Instruments

2N4222A by Texas Instruments is an N-CHANNEL RF FET with a max power dissipation of 0.3W and max operating temp of 200°C. Ideal for switching applications, it features a single configuration in a cylindrical package with isolated case connection.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Vyrian

USA . 7,480 parts In-Stock

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7,480

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Digiode

USA . 4,347 parts In-Stock

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4,347

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Anansix

USA . 2,240 parts In-Stock

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2,240

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PUI

USA . 1,566 parts In-Stock

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1,566

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 199 parts In-Stock

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199

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Electronics Depot

USA . 28 parts In-Stock

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ComSIT Distribution GmbH

Germany . 27 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 26 parts In-Stock

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ECAB

Sweden . 2 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 884 parts In-Stock

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$1.588

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$2.223

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884

$1.588

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$2.223

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DigiPath Technology Company

USA . 498 parts In-Stock

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$1.748

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$1.608

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498

$1.748

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ChromeModa Solutions

Germany . 5,796 parts In-Stock

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$1.784

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$1.463

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IDEA Electronic Components Group

UK . 743 parts In-Stock

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$1.784

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$1.606

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743

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AZTECH Wire

Italy . 772 parts In-Stock

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$16.551

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One Stop Electronics

USA . 1,297 parts In-Stock

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$23.050

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Corphita

USA . 5,695 parts In-Stock

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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2,780

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UNI Independent Distributors

Spain . 1,606 parts In-Stock

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Northwest PG Solutions

USA . 1,296 parts In-Stock

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Supply Digital

USA . 1,243 parts In-Stock

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Native Components

USA . 1,199 parts In-Stock

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1,199

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Perfect Parts

USA . 112 parts In-Stock

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112

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A-Plus Industry Inc.

USA . 3 parts In-Stock

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Overview

Unlock the power of seamless connectivity and reliable performance with the Texas Instruments 2N4222A RF Small Signal Field Effect Transistor. Crafted with precision and expertise, this N-CHANNEL transistor offers unparalleled switching capabilities for a wide range of applications. With a maximum power dissipation of 0.3W and a maximum operating temperature of 200°C, this transistor ensures optimal functionality even in demanding conditions. Trust in Texas Instruments to deliver quality and value in every component, making the 2N4222A a smart choice for your electronic projects.

Feature Benefit Bullets

Package Body Material: METAL

Metal body provides durability and better heat dissipation, making the transistor more reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically have lower ON-resistance and higher switching speed, making them suitable for high efficiency switching applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to control the transistor in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and efficient power management.

Package Shape: ROUND

Round package shape allows for easier mounting and integration into circular layouts or designs.

Terminal Form: WIRE

Wire terminals provide a secure connection and ease of soldering, ensuring a reliable electrical connection.

No. of Terminals: 4

4 terminals offer flexibility in circuit designs and provide multiple connection options for various applications.

Maximum Power Dissipation (Abs): 0.3 W

With a high maximum power dissipation, this transistor can handle heavy loads and high power applications effectively.

Package Style (Meter): CYLINDRICAL

Cylindrical package style allows for easy installation and maintenance in various electronic devices and equipment.

Field Effect Transistor Technology: JUNCTION

Junction technology provides high performance and reliability, ideal for demanding applications requiring efficient power management.

Maximum Operating Temperature: 200 °C

High maximum operating temperature ensures stability and performance in hot environment conditions, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon-based transistor element material offers high efficiency and durability, providing long-lasting performance in various operating conditions.

Terminal Position: BOTTOM

Bottom terminal position ensures easy installation and connection to other components or circuit boards, simplifying the overall circuit design.

Case Connection: ISOLATED

Isolated case connection provides protection against electrical interference and ensures safe operation in a variety of electronic systems.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N4222A attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Configuration:

Field Effect Transistor Technology:

JUNCTION

JEDEC-95 Code:

TO-72

JESD-30 Code:

O-MBCY-W4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N4222A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-483-6073, 5961004836073, 5961-00-062-3131, 5961000623131

NIIN

004836073, 000623131

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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