Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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MPF102RL by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a VERY HIGH FREQUENCY BAND and features a Max Operating Temperature of 125 °C. This THROUGH-HOLE transistor has 3 terminals and a Max Feedback Capacitance of 3pF.
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This material offers durability and protection for the transistor, ensuring long-term reliability in various operating conditions.
N-channel transistors generally have better performance in terms of gain and efficiency, making this transistor suitable for amplifier applications.
Single configuration simplifies the circuit design and makes it easier to integrate into existing systems.
Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.
With a minimum breakdown voltage of 25V, this transistor can handle higher voltages, providing more flexibility in circuit design.
The round package shape is compact and easy to mount, saving space in PCB layouts.
Through-hole terminals provide a secure connection and ease of soldering during assembly.
Depletion mode operation allows for control of current flow, enhancing the transistor's versatility in various applications.
Designed for very high-frequency applications, ensuring efficient signal amplification in high-speed circuits.
Having 3 terminals enables easy interfacing with other components in the circuit.
Cylindrical package style provides mechanical robustness and ease of handling during installation.
Junction FET technology offers high performance and reliability in signal amplification applications.
With a maximum operating temperature of 125 °C, this transistor can withstand high-temperature environments without compromising performance.
Silicon material offers excellent electrical properties and reliability, ensuring consistent performance over time.
Tin lead terminal finish provides good solderability and reliability in electrical connections.
Bottom terminal position facilitates easy mounting and interconnection with other components on the PCB.
Low feedback capacitance helps reduce signal distortion and improve high-frequency performance in amplifier circuits.
RF Small Signal Field Effect Transistors (FET) MPF102RL attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi
Additional Features:
Configuration:
Minimum DS Breakdown Voltage:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
Highest Frequency Band:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Qualification:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
MPF102RL Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
2N7002,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
1N4148
Gulf Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
L7805CV
STMicroelectronics
L7805CV by STMicroelectronics is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring stable voltage regulation in electronic circuits.
SZNUP2105LT1G
Onsemi
SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.
1N4148WS
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138LT3G
BSS138LT3G by Onsemi is a N-CHANNEL FET with a min DS breakdown voltage of 50V. It is used for switching applications and has a max drain current of 0.2A and max drain-source on resistance of 3.5 ohm.
BAV99
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
International Semiconductor
2N7002
Promax-johnton
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: 7.5 ohm; Minimum DS Breakdown Voltage: 60 V;
Lite-on Semiconductor
NE555D
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
M24308/2-1F
Cinch Connectivity Solutions
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Body Depth: .375 inch;
2N2222A
Microchip Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -65 Cel; Terminal Position: BOTTOM;
SS14
Frontier Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99+
Multicomp Pro
BAV99+ by Multicomp Pro is a series connected diode with 0.2A output current and 75V peak reverse voltage. Its 0.006us reverse recovery time makes it ideal for high-speed applications. This small outline rectifier diode is designed for surface mount installation in electronic circuits.
LM317T
Linear Technology
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Operating Temperature (TJ-Min): 0 Cel; No. of Functions: 1; JESD-609 Code: e0;
SMBJ18CA
Synsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358N
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Telcom Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
STM32H750VBT6
STM32H750VBT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, offering 20 timers and 16 DMA channels. It features 2 DAC and 16 ADC channels, suitable for industrial applications requiring high-speed processing up to 48 MHz. With extensive connectivity options like FDCAN, Ethernet, and USB, it provides versatile solutions in a compact package.
2N3823
Central Semiconductor
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e0; Qualification: Not Qualified; Terminal Finish: TIN LEAD;
3SK167-2
3SK167-2 by Onsemi is an N-CHANNEL RF FET with max drain current of 0.055A and power dissipation of 0.2W. Ideal for applications requiring small signal amplification in high-frequency circuits up to 125 °C ambient temperature.
SHF-0189Z
Sirenza Microdevices
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HETERO-JUNCTION; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY;
BF1204T/R
NXP Semiconductors
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; JESD-609 Code: e3; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
3N204
Texas Instruments
3N204 by Texas Instruments is a N-CHANNEL FET with 25V DS Breakdown Voltage and 14dB Power Gain, ideal for AMPLIFIER applications. Operating in DUAL GATE, DEPLETION MODE, it offers 0.05A Drain Current and 0.36W Power Dissipation at 200°C. Package: METAL CYLINDRICAL with SOURCE AND SUBSTRATE connection.
BF908WR
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): .045 pF; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;
BLF241
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: AMPLIFIER; Package Style (Meter): CYLINDRICAL;
BF989-T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; No. of Terminals: 4; Transistor Application: AMPLIFIER;
934063138215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: JUNCTION; Terminal Form: GULL WING; JEDEC-95 Code: TO-236AB;
BF909T/R
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; JESD-30 Code: R-PDSO-G4; Package Body Material: PLASTIC/EPOXY;
BF545CTRL13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER; Operating Mode: DEPLETION MODE;
BF245ARLRM
BF245ARLRM by Onsemi is an N-CHANNEL RF FET with 30V DS breakdown voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
2SK544E
The Onsemi 2SK544E is an N-CHANNEL RF FET with a max drain current of 0.03A, operating in DEPLETION MODE for AMPLIFIER applications. It features METAL-OXIDE SEMICONDUCTOR tech and operates in the VERY HIGH FREQUENCY BAND, making it ideal for high-frequency signal amplification in various electronic devices.
ATF-55143-TR2G
Broadcom
Broadcom ATF-55143-TR2G is a N-channel RF FET with 15.5 dB power gain, ideal for amplifier applications in C band. It features 5V DS breakdown voltage, 0.1A drain current, and operates at up to 150°C. The transistor's high electron mobility technology ensures efficient performance in small outline package style.
2N4416
Solitron Devices
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Qualification: Not Qualified; Package Style (Meter): CYLINDRICAL;
BF511T/R
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Position: DUAL; Transistor Element Material: SILICON;
FLC057WG
Fujitsu
FLC057WG by Fujitsu is an N-CHANNEL RF FET with 15V DS Breakdown Voltage. It operates in C BAND, has a max power dissipation of 3.75W, and can withstand up to 175°C. Ideal for high-frequency applications requiring reliable signal amplification in compact designs.
NE3210S01-T1
Renesas Electronics
NE3210S01-T1 by Renesas Electronics is a N-CHANNEL RF FET for AMPLIFIER applications. Features include Gp of 12 dB, DEPLETION MODE operation, and KU BAND frequency band. With a max power dissipation of 0.165 W and operating temp up to 125 °C, it's ideal for MICROWAVE systems.
BLP10H605
RF Small Signal Field-Effect Transistors;
2N5486
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM;
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MPF102
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: JUNCTION; Minimum DS Breakdown Voltage: 25 V; Maximum Feedback Capacitance (Crss): 3 pF;
MPF102G
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Transistor Application: AMPLIFIER; No. of Terminals: 3;
MPF102RL1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Maximum Feedback Capacitance (Crss): 3 pF; Maximum Operating Temperature: 125 Cel;
MPF102RLRA
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Operating Mode: DEPLETION MODE; Maximum Feedback Capacitance (Crss): 3 pF;
MPF102RLRE
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; No. of Elements: 1; Package Shape: ROUND;
MPF102RLRM
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; Maximum Feedback Capacitance (Crss): 3 pF; Qualification: Not Qualified;
MPF102RLRP
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Position: BOTTOM; JEDEC-95 Code: TO-92; Package Style (Meter): CYLINDRICAL;
MPF102ZL1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 25 V; Qualification: Not Qualified; JEDEC-95 Code: TO-92;
Motorola
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Operating Mode: DEPLETION MODE; Package Shape: ROUND;
MPF102RLRB
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; Package Shape: ROUND; Maximum Operating Temperature: 125 Cel;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Qualification: Not Qualified; Maximum Operating Temperature: 125 Cel; Transistor Application: AMPLIFIER;
MPF102RL
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; Package Shape: ROUND; Additional Features: EUROPEAN PART NUMBER;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Terminal Form: THROUGH-HOLE; JESD-30 Code: O-PBCY-T3;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; JESD-609 Code: e0; Transistor Element Material: SILICON;
MPF102J05Z
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Feedback Capacitance (Crss): 3 pF; Qualification: Not Qualified; Operating Mode: DEPLETION MODE;
MPF102J18Z
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; Operating Mode: DEPLETION MODE; Package Shape: ROUND;
MPF102D26Z
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: SWITCHING; No. of Elements: 1; Transistor Element Material: SILICON;
MPF102D27Z
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND;
MPF102D74Z
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Terminal Form: THROUGH-HOLE; Package Body Material: PLASTIC/EPOXY;
MPF102D75Z
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; JEDEC-95 Code: TO-92; Maximum Feedback Capacitance (Crss): 3 pF;
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