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MPF102ZL1

Onsemi

MPF102ZL1 by Onsemi

MPF102ZL1 by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it operates in DEPLETION MODE at up to 125 °C. Featuring a VERY HIGH FREQUENCY BAND, this transistor has 3 terminals and a max Crss of 3pF.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,732 parts In-Stock

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Vyrian

USA . 1,045 parts In-Stock

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SupplyDigital Components

Austria . 7,093 parts In-Stock

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TANS Electronics

Latvia . 4,692 parts In-Stock

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Kulean Microsystems

USA . 2,972 parts In-Stock

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Problanco Electronics

Mexico . 2,827 parts In-Stock

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Corphita

USA . 1,087 parts In-Stock

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Corohmni

South Africa . 490 parts In-Stock

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UHIMA Technologies

Türkiye . 421 parts In-Stock

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Overview

Unlock the power of RF amplification with the MPF102ZL1 by Onsemi. Crafted with precision and expertise, this N-channel field effect transistor is designed for high performance in amplifier applications. Its very high frequency band capabilities make it ideal for a wide range of uses. From enhancing signal strength to improving transmission quality, this transistor offers unmatched value and reliability. Trust Onsemi's reputation for excellence and elevate your projects with the MPF102ZL1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the transistor lightweight and durable, ideal for portable or high vibration environments.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility and faster switching speeds compared to P-channel transistors, making them suitable for high frequency applications.

Configuration: SINGLE

Single configuration transistors are easier to design with and integrate into circuits, simplifying the overall system design.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor provides high gain and low noise for audio or RF signal amplification.

Minimum DS Breakdown Voltage: 25 V

With a minimum breakdown voltage of 25 V, this transistor can handle higher voltage applications without risk of damage, ensuring reliability in operation.

Package Shape: ROUND

The round package shape allows for easy mounting and installation in various systems, providing flexibility in design and assembly.

Terminal Form: THROUGH-HOLE

The through-hole terminal form simplifies the soldering process and ensures secure connections, enhancing the overall reliability of the transistor.

Operating Mode: DEPLETION MODE

Depletion mode transistors are suitable for applications where the transistor needs to be in an 'off' state by default, offering better control over the circuit operation.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

The very high frequency band capability of this transistor makes it suitable for high-frequency applications such as wireless communication or radar systems.

No. of Terminals: 3

Having 3 terminals allows for easy interfacing with other components in a circuit, enabling versatile use in various applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers efficient heat dissipation and space-saving benefits, making it suitable for compact electronic devices.

Field Effect Transistor Technology: JUNCTION

Junction FETs offer high input impedance and low output impedance, ideal for low-power applications or signal amplification circuits.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this transistor can withstand high temperatures, ensuring reliable performance in demanding environments.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them a popular choice for a wide range of electronic applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides excellent solderability and conductivity, ensuring reliable electrical connections in the circuit.

Terminal Position: BOTTOM

The bottom terminal position allows for easy PCB mounting and circuit board layout, facilitating efficient assembly and integration.

Maximum Feedback Capacitance (Crss): 3 pF

The low feedback capacitance of 3 pF reduces the risk of feedback oscillations and improves the stability of the amplifier circuit.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) MPF102ZL1 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

3 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MPF102ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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