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MPF102RLRE

Onsemi

MPF102RLRE by Onsemi

MPF102RLRE by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it operates in DEPLETION MODE at up to 125 °C. Featuring a VERY HIGH FREQUENCY BAND, this transistor has 3 terminals and a max Crss of 3 pF.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,256 parts In-Stock

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Vyrian

USA . 1,943 parts In-Stock

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Corphita

USA . 2,396 parts In-Stock

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Problanco Electronics

Mexico . 1,895 parts In-Stock

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TANS Electronics

Latvia . 1,854 parts In-Stock

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Kulean Microsystems

USA . 1,819 parts In-Stock

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SupplyDigital Components

Austria . 494 parts In-Stock

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UHIMA Technologies

Türkiye . 287 parts In-Stock

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Corohmni

South Africa . 252 parts In-Stock

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Overview

Enhance your RF amplifier projects with the MPF102RLRE from Onsemi, a top-quality manufacturer known for their reliable components. This N-channel field effect transistor offers excellent performance in the very high frequency band, making it ideal for a wide range of applications. With its durable plastic/epoxy package and depletion mode operation, this transistor delivers superior value and benefits to customers seeking high-quality components for their amplification needs. Upgrade your designs with the MPF102RLRE and experience the difference Onsemi can make in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have higher mobility and faster switching speeds, making them ideal for high-frequency applications like amplifiers.

Configuration: SINGLE

Single configuration simplifies the design and implementation of circuits, reducing complexity and potential failures.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplification tasks.

Minimum DS Breakdown Voltage: 25 V

With a minimum breakdown voltage of 25V, this transistor can handle higher voltages without failing, making it reliable for various circuits.

Package Shape: ROUND

Round shape allows for easy mounting and installation in different electronic devices and circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and mechanical stability, making it easier to solder and integrate into circuits.

Operating Mode: DEPLETION MODE

Depletion mode operation offers precise control over the transistor's conductivity, enabling efficient signal amplification.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Designed for very high-frequency applications, ensuring excellent performance in amplifying signals at higher frequencies.

No. of Terminals: 3

The 3 terminals provide necessary connections for the transistor to operate effectively within a circuit.

Package Style (Meter): CYLINDRICAL

Cylindrical package style allows for compact and space-efficient integration into electronic devices and circuit layouts.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers high input impedance and low output impedance, making it suitable for amplifier applications.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this transistor can withstand high temperatures in various operating environments.

Transistor Element Material: SILICON

Silicon transistors provide high performance, reliability, and versatility in electronic circuits and applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability, enhancing the connection reliability and longevity of the transistor.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting and soldering onto circuit boards, allowing for efficient circuit integration.

Maximum Feedback Capacitance (Crss): 3 pF

Low feedback capacitance ensures stability and minimal signal distortion, making this transistor suitable for high-frequency amplification tasks.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) MPF102RLRE attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

3 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MPF102RLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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