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MPF102G

Onsemi

MPF102G by Onsemi

MPF102G by Onsemi is an N-CHANNEL RF FET with a 25V DS breakdown voltage, ideal for AMPLIFIER applications in the VERY HIGH FREQUENCY BAND. Featuring a DEPLETION MODE operation, it has a max power dissipation of 0.2W and can withstand up to 125 °C operating temperature.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 8,246 parts In-Stock

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Digiode

USA . 1,632 parts In-Stock

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AZTECH Wire

Italy . 995 parts In-Stock

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$10.210

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995

$10.210

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Ampacity Inc.

Singapore . 352 parts In-Stock

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$11.050

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Component Stockers USA

USA . 477 parts In-Stock

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$99.990

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Problanco Electronics

Mexico . 8,230 parts In-Stock

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Kulean Microsystems

USA . 4,652 parts In-Stock

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SupplyDigital Components

Austria . 2,813 parts In-Stock

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TANS Electronics

Latvia . 2,745 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 965 parts In-Stock

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Perfect Parts

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Corohmni

South Africa . 64 parts In-Stock

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Overview

Looking for a high-quality RF small signal Field Effect Transistor? Look no further than the MPF102G by Onsemi! With a reputation for excellence, Onsemi delivers top-notch products that meet and exceed industry standards. The MPF102G is perfect for amplifier applications in the very high-frequency band, offering exceptional performance and reliability. With its N-channel configuration and depletion mode operation, this transistor is a must-have for your projects. Trust Onsemi to provide you with the best in semiconductor technology, and experience the value and benefits of the MPF102G today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the FET, ensuring reliable performance in various environments.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower ON resistance and better performance, making them suitable for high-frequency applications.

Configuration: SINGLE

A single configuration simplifies the circuit design and allows for easier integration into amplifier applications.

Minimum DS Breakdown Voltage: 25 V

The minimum breakdown voltage of 25V ensures that the FET can handle high voltages without getting damaged, making it reliable for amplifier applications.

Operating Mode: DEPLETION MODE

Depletion mode FETs offer high input impedance and low noise, making them ideal for amplifier applications where signal integrity is crucial.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, this FET can handle high power levels in amplifier applications, ensuring stable operation.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

The FET is designed for very high-frequency applications, making it suitable for amplifiers that require fast signal processing.

Maximum Operating Temperature: 125 °C

The FET can operate at temperatures up to 125 °C, allowing it to withstand harsh environmental conditions without compromising performance.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers high switching speeds and low noise, making it ideal for amplifier applications where signal accuracy is essential.

Maximum Feedback Capacitance (Crss): 3 pF

The low feedback capacitance of 3pF helps reduce signal distortion and improve stability in amplifier circuits, ensuring high-quality signal amplification.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) MPF102G attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

3 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MPF102G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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