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MPF102

Onsemi

MPF102 by Onsemi

MPF102 by Onsemi is an N-CHANNEL RF FET with a 25V DS breakdown voltage, ideal for amplifier applications in the VHF band. Featuring a single configuration and depletion mode operation, it has a very high frequency range with 3pF feedback capacitance. The transistor's cylindrical package body is made of plastic/epoxy with tin/lead terminal finish.

Median Price

$7.745

Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

1k+

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Forefront Electronics and Design

USA . 2 parts In-Stock

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American Microsemiconductor Inc.

USA . 19 parts In-Stock

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Vyrian

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Digiode

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Anansix

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Component Electronics Inc.

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Jameco Electronics

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Avant Electronics Limited

UK . 450 parts In-Stock

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J2 Sourcing AB

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Manoshevitz Elec. Sales

Israel . 90 parts In-Stock

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Manotoh

Italy . 61 parts In-Stock

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MISTER SPROCKETS

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LittleDiode

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First Choice Components Inc.

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Bristol Electronics

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Atlantic Semiconductor

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R&J Components

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A&K Electronics

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ECAB

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Prism Electronics

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Corohmni

South Africa . 417 parts In-Stock

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Component Stockers USA

USA . 844 parts In-Stock

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$1.460

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Perfect Parts

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A-Z Elektronik GmbH

Germany . 6,228 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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TANS Electronics

Latvia . 2,600 parts In-Stock

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SupplyDigital Components

Austria . 1,125 parts In-Stock

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Supply Digital

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Kepictronics

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UHIMA Technologies

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Overview

Unlock the power of cutting-edge technology with the MPF102 by Onsemi. As a leader in RF Small Signal Field Effect Transistors, Onsemi delivers top-quality products that exceed industry standards. The MPF102 is perfect for amplifier applications, offering unmatched performance in the very high frequency band. Its N-channel configuration and depletion mode operation provide unparalleled reliability and efficiency. Experience the difference with Onsemi's MPF102 - where innovation meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors typically have better performance characteristics compared to P-CHANNEL transistors, making this an efficient choice.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and makes it easier to integrate into various applications.

Minimum DS Breakdown Voltage: 25 V

With a breakdown voltage of 25 V, this transistor can handle higher voltages without malfunctioning, making it versatile for different applications.

Package Shape: ROUND

The round package shape allows for easy mounting and handling, making it convenient for assembly.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering for a reliable performance.

Operating Mode: DEPLETION MODE

Depletion mode operation allows for control over current flow, offering flexibility in circuit design and optimization.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Operates in very high frequency bands, suitable for applications requiring fast signal processing and high-speed performance.

No. of Terminals: 3

With 3 terminals, this transistor can be easily connected in various circuit configurations for versatile use.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers compact size and efficient thermal dissipation, ideal for space-constrained applications.

Field Effect Transistor Technology: JUNCTION

JUNCTION technology provides high efficiency and performance, ensuring reliable operation in demanding conditions.

Transistor Element Material: SILICON

Silicon material offers good thermal stability and electrical properties, contributing to the overall reliability of the transistor.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish provides a strong and durable connection, enhancing the overall longevity of the transistor.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and soldering, simplifying the assembly process.

Peak Reflow Temperature °C: 235

With a peak reflow temperature of 235 °C, this transistor can withstand high-temperature soldering processes without damage.

Maximum Feedback Capacitance (Crss): 3 pF

Low feedback capacitance minimizes signal loss and distortion, ensuring high-fidelity amplification in audio and RF applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) MPF102 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

3 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MPF102 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-394-0406, 5961003940406

NIIN

003940406

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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