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PD57002S-E

STMicroelectronics

PD57002S-E by STMicroelectronics

PD57002S-E by STMicroelectronics is an N-channel RF FET designed for amplifier applications. It features a 65V breakdown voltage, 15 dB power gain, and operates in the ultra-high frequency band. Ideal for compact designs with a max temp of 165 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,828 parts In-Stock

1+ parts

-

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2,828

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Vyrian

USA . 2,746 parts In-Stock

1+ parts

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2,746

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Digiode

USA . 2,651 parts In-Stock

1+ parts

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2,651

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,862 parts In-Stock

1+ parts

$1.654

100+ parts

-

1k+ parts

$1.489

10k+ parts

-

1,862

$1.654

-

$1.489

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MKK Technologies

India . 1,837 parts In-Stock

1+ parts

$3.111

100+ parts

-

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10k+ parts

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1,837

$3.111

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DigiPath Technology Company

USA . 1,837 parts In-Stock

1+ parts

$3.111

100+ parts

-

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-

10k+ parts

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1,837

$3.111

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Corphita

USA . 4,670 parts In-Stock

1+ parts

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4,670

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Parana Technologies

USA . 1,540 parts In-Stock

1+ parts

-

100+ parts

$1.978

1k+ parts

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10k+ parts

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1,540

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$1.978

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Overview

Unlock the power of innovation with the PD57002S-E from STMicroelectronics, a leader in semiconductor technology. This N-channel RF FET excels in amplifier applications, delivering exceptional performance and reliability for your projects. With its compact design and high frequency capabilities, it’s perfect for modern electronics, ensuring efficiency without compromise. Experience unparalleled quality and support with STMicroelectronics—your trusted partner in achieving outstanding results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy ensures the transistor is lightweight and resistant to environmental stress, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer better electron mobility, making them ideal for high-speed applications.

Configuration: SINGLE

A single configuration simplifies circuit design, making it easier to integrate into existing systems.

Transistor Application: AMPLIFIER

Designed for amplification, this FET is perfect for audio and radio frequency applications where signal boosting is essential.

Surface Mount: YES

Surface mount technology allows for smaller footprint designs and enhanced performance in compact electronic devices.

Minimum DS Breakdown Voltage: 65 V

A minimum breakdown voltage of 65V provides a safe margin for high-voltage applications, enhancing reliability.

Minimum Power Gain (Gp): 15 dB

With a minimum power gain of 15 dB, this FET ensures effective amplification with minimal signal loss.

Package Shape: RECTANGULAR

The rectangular package shape facilitates efficient use of space on PCBs, promoting compact designs.

Terminal Form: FLAT

Flat terminals ensure better thermal performance and easier soldering process in surface mount applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for improved control over the conductivity of the transistor, leading to better performance in amplifying signals.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for ultra high frequency applications, this FET is ideal for advanced communication systems.

Maximum Drain Current (Abs) (ID): 0.25 A

A maximum drain current of 0.25 A makes this FET versatile for various circuits while ensuring it operates within safe limits.

No. of Terminals: 2

The 2-terminal design simplifies interfacing and reduces board complexity, making it easier to use.

Maximum Power Dissipation (Abs): 4.75 W

With a high power dissipation capability of 4.75 W, this FET can handle demanding applications without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for high-density PCBs, supporting the trend towards miniaturization in electronics.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology enables faster switching and lower power consumption, making it ideal for efficient designs.

Maximum Operating Temperature: 165 °C

A high operating temperature of 165 °C allows for operation in challenging environments without performance degradation.

Transistor Element Material: SILICON

Silicon material provides reliable performance, ensuring durability and longevity under typical operating conditions.

Maximum Drain Current (ID): 0.25 A

Repeated specification of 0.25 A for maximum drain current underscores its consistent performance capabilities.

Terminal Position: DUAL

Dual terminal positioning enhances the ease of layout design on PCBs, improving overall assembly efficiency.

Case Connection: SOURCE

Source connection facilitates easier integration with power management systems, ensuring better control of current flow.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) PD57002S-E attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

65 V

Maximum Drain Current (Abs) (ID):

.25 A

Maximum Drain Current (ID):

.25 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

165 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

15 dB

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PD57002S-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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