Loading...

PD57002S

STMicroelectronics

PD57002S by STMicroelectronics

PD57002S by STMicroelectronics is an N-channel RF FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, power gain of 15 dB, and operates in the ultra-high frequency band. This surface-mount transistor supports up to 4.75W dissipation at 165 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,816 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,816

-

-

-

-

Digiode

USA . 853 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

853

-

-

-

-

Vyrian

USA . 87 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

87

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,931 parts In-Stock

1+ parts

$0.499

100+ parts

-

1k+ parts

$0.449

10k+ parts

-

1,931

$0.499

-

$0.449

-

MKK Technologies

India . 2,332 parts In-Stock

1+ parts

$0.938

100+ parts

-

1k+ parts

-

10k+ parts

-

2,332

$0.938

-

-

-

DigiPath Technology Company

USA . 2,332 parts In-Stock

1+ parts

$0.938

100+ parts

-

1k+ parts

-

10k+ parts

-

2,332

$0.938

-

-

-

Corphita

USA . 3,769 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,769

-

-

-

-

Parana Technologies

USA . 1,417 parts In-Stock

1+ parts

-

100+ parts

$0.596

1k+ parts

-

10k+ parts

-

1,417

-

$0.596

-

-

Assy Fe

Spain . 6 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6

-

-

-

-

Overview

Elevate your designs with the PD57002S from STMicroelectronics, a premier choice in RF Small Signal FETs. Renowned for its reliability and performance, this N-channel transistor excels as an amplifier in ultra-high frequency applications. Enjoy enhanced power gain and efficiency with ST’s cutting-edge technology, ensuring that your devices operate at peak performance in various settings. Trust in STMicroelectronics for unmatched quality and innovation tailored to drive your projects forward.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material is lightweight, cost-effective, and provides good protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer better performance, lower on-resistance, and higher speed compared to P-channel types, making them ideal for amplification and switching applications.

Configuration: SINGLE

A single configuration simplifies the design and reduces space on the PCB, which is beneficial for compact circuit layouts.

Transistor Application: AMPLIFIER

Designed for amplification, this FET is suitable for audio and RF applications where signal integrity and gain are critical.

Surface Mount: YES

Surface mount technology enables automated manufacturing and saves board space, promoting higher efficiency in device packaging.

Minimum DS Breakdown Voltage: 65 V

A breakdown voltage of 65 V ensures reliability in high-voltage applications, protecting the circuit from damage.

Minimum Power Gain (Gp): 15 dB

A power gain of 15 dB indicates strong amplification capabilities, making this FET effective for enhancing signal strength.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient layout options on PCBs and optimizes space utilization.

Terminal Form: FLAT

Flat terminals provide a stable connection and make soldering easier, improving assembly reliability.

Operating Mode: ENHANCEMENT MODE

Enhancement mode allows for lower power consumption and improved performance in switching applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capable of operating in the UHF band makes this FET ideal for applications requiring high-speed signal processing.

Maximum Drain Current (Abs) (ID): 0.25 A

The maximum drain current of 0.25 A makes this transistor suitable for moderate power applications while maintaining safety margins.

No. of Terminals: 2

A two-terminal design simplifies the circuit layout and enhances ease of integration into various electronic devices.

Maximum Power Dissipation (Abs): 4.75 W

With a power dissipation rating of 4.75 W, this device can effectively handle heat generated during operation, ensuring reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style supports high-density applications and enables efficient use of space on the PCB.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high input impedance and low power consumption, making this FET efficient for various applications.

Maximum Operating Temperature: 165 °C

Capable of functioning at high temperatures, this FET ensures performance stability in demanding thermal environments.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its efficient electrical properties and stability, making this FET reliable.

Terminal Finish: TIN LEAD

The tin-lead finish provides excellent solderability and corrosion resistance, enhancing the durability of the connections.

Maximum Drain Current (ID): 0.25 A

Reiterated maximum current rating emphasizes the transistor's design for efficient operation without overheating.

Terminal Position: DUAL

A dual terminal position simplifies circuit design and enhances compatibility with standard PCB layouts.

Case Connection: SOURCE

Source case connection allows for straightforward implementation in circuits, providing ease of assembly and connection.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) PD57002S attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

65 V

Maximum Drain Current (Abs) (ID):

.25 A

Maximum Drain Current (ID):

.25 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

165 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

15 dB

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PD57002S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 3