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STMicroelectronics RF Small Signal Field Effect Transistors (FET) 3

RF Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
PD84001 by STMicroelectronics

PD84001

STMicroelectronics

PD84001 by STMicroelectronics is an N-CHANNEL RF Small Signal FET with a min DS Breakdown Voltage of 18V. It is used as an amplifier in the ULTRA HIGH FREQUENCY BAND, with a max Drain Current of 1.5A and a Power Dissipation of 6W.

SOURCE

SINGLE

18 V

1.5 A

1.5 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

6 W

13 dB

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn)

FLAT

DUAL

30

AMPLIFIER

SILICON

PD57002 by STMicroelectronics

PD57002

STMicroelectronics

PD57002 by STMicroelectronics is an N-channel RF FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, power gain of 15 dB, and operates in the ultra-high frequency band. This surface-mount transistor supports up to 4.75W power dissipation.

HIGH RELIABILITY

SOURCE

SINGLE

65 V

.25 A

.25 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G2

e0

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

4.75 W

15 dB

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

AMPLIFIER

SILICON

PD57002-E by STMicroelectronics

PD57002-E

STMicroelectronics

PD57002-E by STMicroelectronics is an N-channel RF FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, max drain current of 0.25A, and operates in the ultra-high frequency band. Ideal for compact surface mount designs, it ensures efficient performance up to 165 °C.

HIGH RELIABILITY

SOURCE

SINGLE

65 V

.25 A

.25 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G2

e3

3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

N-CHANNEL

4.75 W

15 dB

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

AMPLIFIER

SILICON