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BF510,215

NXP Semiconductors

BF510,215 by NXP Semiconductors

The NXP Semiconductors BF510,215 is an N-CHANNEL RF FET with a DEPLETION MODE operating mode. It has a 20V DS breakdown voltage and operates in the VERY HIGH FREQUENCY BAND. Ideal for AMPLIFIER applications, this transistor has a max power dissipation of 0.25W and can handle a max drain current of 0.03A.

Median Price

$0.676

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 119 parts In-Stock

1+ parts

$0.320

100+ parts

$0.310

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$0.310

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-

119

$0.320

$0.310

$0.310

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Farnell

UK . 3,489 parts In-Stock

1+ parts

$0.739

100+ parts

$0.325

1k+ parts

$0.233

10k+ parts

$0.228

3,489

$0.739

$0.325

$0.233

$0.228

Element14

Singapore . 4,403 parts In-Stock

1+ parts

-

100+ parts

$0.676

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$0.541

10k+ parts

$0.458

4,403

-

$0.676

$0.541

$0.458

Distributors (In-Stock)

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Vyrian

USA . 7,229 parts In-Stock

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7,229

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VNN

France . 5,291 parts In-Stock

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Digiode

USA . 3,952 parts In-Stock

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3,952

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Anansix

USA . 1,347 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Cogito LLC

Ukraine . 392 parts In-Stock

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392

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,608 parts In-Stock

1+ parts

$0.272

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2,608

$0.272

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Semicontronic

India . 2,414 parts In-Stock

1+ parts

$0.272

100+ parts

$0.265

1k+ parts

$0.264

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2,414

$0.272

$0.265

$0.264

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Corohmni

South Africa . 82 parts In-Stock

1+ parts

$0.883

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82

$0.883

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Aztec Data Supply Inc.

USA . 2,720 parts In-Stock

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$1.306

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2,720

$1.306

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$1.646

100+ parts

$1.498

1k+ parts

$1.350

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5,000

$1.646

$1.498

$1.350

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AZTECH Wire

Italy . 470 parts In-Stock

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$20.130

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470

$20.130

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Microchip USA

USA . 4,538 parts In-Stock

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4,538

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UNI Independent Distributors

Spain . 4,210 parts In-Stock

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Continental Prestige Electronics

USA . 3,776 parts In-Stock

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Perfect Parts

USA . 3,446 parts In-Stock

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3,446

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Corphita

USA . 2,308 parts In-Stock

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Argo Parts USA

USA . 335 parts In-Stock

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335

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Bastille Electronics

Australia . 97 parts In-Stock

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97

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Overview

Experience unparalleled performance and reliability with the BF510,215 by NXP Semiconductors. As a leading manufacturer in the industry, NXP Semiconductors delivers top-quality RF Small Signal Field Effect Transistors that are perfect for amplifiers. With its N-CHANNEL polarity, single configuration, and very high frequency band, this transistor offers exceptional value to customers seeking superior functionality and efficiency. Trust NXP Semiconductors for innovative solutions that elevate your applications to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Configuration: SINGLE

Simplifies the design and implementation of the transistor in amplifier circuits.

Minimum DS Breakdown Voltage: 20 V

Ensures reliable performance and protection against voltage spikes.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Maximum Power Dissipation (Abs): 0.25 W

Can handle moderate power levels without overheating.

Maximum Operating Temperature: 150 °C

Capable of operating in high temperature environments without performance degradation.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF510,215 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Configuration:

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

.4 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF510,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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