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BF511-TAPE-7

NXP Semiconductors

BF511-TAPE-7 by NXP Semiconductors

BF511-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 20V, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 3,156 parts In-Stock

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Vyrian

USA . 2,544 parts In-Stock

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Anansix

USA . 1,882 parts In-Stock

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Native Components

USA . 833 parts In-Stock

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$1.403

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833

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Northwest PG Solutions

USA . 2,150 parts In-Stock

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$1.544

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One Stop Electronics

USA . 745 parts In-Stock

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$52.050

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745

$52.050

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UNI Independent Distributors

Spain . 7,027 parts In-Stock

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Corphita

USA . 140 parts In-Stock

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Overview

Unlock exceptional performance with the BF511-TAPE-7 from NXP Semiconductors. This high-quality RF Small Signal FET is engineered for amplifying applications, delivering reliability and efficiency in a compact design. With its advanced junction technology and robust features, it ensures superior signal integrity in very high-frequency environments. Choose NXP for unparalleled innovation and elevate your projects with a trusted leader in semiconductor solutions!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body provides durability and protection against environmental factors, making it suitable for various applications in electronics.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally offer lower ON resistance and higher performance, making them ideal for amplification and switching applications.

Configuration: SINGLE

A single configuration allows for compact designs and easy integration into circuits without unnecessary complexity.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this FET is optimized for high gain, ensuring strong signal performance in audio and RF applications.

Surface Mount: YES

Surface mount capability significantly reduces the space required on PCBs, allowing for more compact devices and easier automation in assembly.

Minimum DS Breakdown Voltage: 20 V

A minimum DS breakdown voltage of 20 V ensures this FET can reliably operate in a variety of voltage environments without failure.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient use of space on printed circuit boards, contributing to better layout options.

Terminal Form: GULL WING

Gull wing terminals enhance solder joint reliability, ensuring long-lasting connections in high-stress applications.

Operating Mode: DEPLETION MODE

Depletion mode FETs allow for versatile control of output current, suitable for analog signal processing and linear applications.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Operating in the very high frequency band makes this FET ideal for high-speed applications, including RF amplifiers and microwave circuits.

No. of Terminals: 3

The three-terminal configuration simplifies circuit design and integration, allowing for easy connection to external components.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for high-density component placement, saving space in compact electronic devices.

Field Effect Transistor Technology: JUNCTION

Junction technology ensures reliable performance and stability, making this FET suitable for a wide range of electronic applications.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C expands the operational range, allowing use in high-temperature environments.

Transistor Element Material: SILICON

Silicon as the element material provides high electron mobility, enhancing the efficiency and performance of the FET.

Maximum Drain Current (ID): 0.03 A

Supporting a maximum drain current of 0.03 A provides adequate power handling for many small signal applications, ensuring reliable performance.

Terminal Position: DUAL

Dual terminal positioning offers flexible routing options in circuit layouts, facilitating easier design and assembly processes.

Maximum Feedback Capacitance (Crss): 0.4 pF

A low maximum feedback capacitance helps in achieving high-speed operation with minimal signal distortion, making it suitable for RF applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF511-TAPE-7 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

.4 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF511-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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