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BF998,235

NXP Semiconductors

BF998,235 by NXP Semiconductors

BF998,235 by NXP Semiconductors is an N-CHANNEL RF FET with a 12V DS Breakdown Voltage. It operates in DEPLETION MODE and has a max ID of 0.03A. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, this transistor features a GULL WING terminal form and can handle up to 0.2W power dissipation.

Median Price

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5

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1k+

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Vyrian

USA . 8,315 parts In-Stock

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VNN

France . 3,485 parts In-Stock

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Digiode

USA . 2,690 parts In-Stock

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Anansix

USA . 1,578 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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AZTECH Wire

Italy . 719 parts In-Stock

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Ampacity Inc.

Singapore . 885 parts In-Stock

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$17.050

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One Stop Electronics

USA . 1,075 parts In-Stock

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Argo Parts USA

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UNI Independent Distributors

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Corphita

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Continental Prestige Electronics

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Microchip USA

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Bastille Electronics

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Overview

Elevate your amplifier performance with the BF998,235 from NXP Semiconductors. Crafted with precision and expertise, this RF Small Signal Field Effect Transistor offers unmatched quality and reliability. Whether you're in the telecommunications or aerospace industry, this versatile transistor is designed to deliver superior functionality in ultra-high frequency applications. Experience seamless integration with its single configuration and built-in diode. Trust NXP Semiconductors for cutting-edge technology that exceeds expectations. Unlock endless possibilities with the BF998,235.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type:

N-CHANNEL - Offers efficient signal amplification and transmission, suitable for a wide range of electronic devices.

Configuration:

SINGLE WITH BUILT-IN DIODE - Simplifies circuit design and saves space, enhancing the overall performance of the transistor.

Transistor Application:

AMPLIFIER - Specifically designed for amplification tasks, ensuring high-quality signal output and performance.

Surface Mount:

YES - Easy to integrate into PCBs, saving assembly time and space while maintaining a secure connection.

Minimum DS Breakdown Voltage:

12 V - Provides a safe operating margin and protects the transistor from voltage spikes, ensuring long-term reliability.

Package Shape:

RECTANGULAR - Allows for easy placement and organization on a circuit board, improving overall system efficiency.

Terminal Form:

GULL WING - Facilitates soldering and connection, ensuring a strong and reliable bond for optimal performance.

Operating Mode:

DUAL GATE, DEPLETION MODE - Offers precise control over the transistor's operation, allowing for customized performance in various applications.

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND - Enables fast signal processing and transmission, suitable for high-speed communication systems.

Maximum Drain Current (Abs) (ID):

0.03 A - Supports sufficient current flow for various applications, ensuring stable and efficient operation.

No. of Terminals:

4 - Provides multiple connection points for versatile integration and functionality within a circuit.

Maximum Power Dissipation (Abs):

0.2 W - Handles heat dissipation effectively, ensuring long-term reliability and continuous operation under varying conditions.

Package Style (Meter):

SMALL OUTLINE - Compact and space-saving design, ideal for applications with limited space requirements.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR - Offers high performance and efficiency, making it a reliable choice for demanding applications.

Maximum Operating Temperature:

150 °C - Allows for reliable operation in a wide range of environments, ensuring consistent performance.

Transistor Element Material:

SILICON - Provides stability and reliability in operation, ensuring long-term performance and durability.

Terminal Finish:

TIN - Ensures a strong and reliable connection, minimizing the risk of signal loss or interruptions.

Maximum Time At Peak Reflow Temperature (s):

30 - Enables efficient soldering and integration processes, saving time and ensuring reliable connections.

Peak Reflow Temperature °C:

260 - Handles high-temperature reflow processes effectively, ensuring a secure and durable connection.

Reference Standard:

IEC-134 - Complies with industry standards, ensuring quality and reliability in performance and operation.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF998,235 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

12 V

Maximum Drain Current (Abs) (ID):

.03 A

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

IEC-134

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF998,235 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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