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BF989-TAPE-13

NXP Semiconductors

BF989-TAPE-13 by NXP Semiconductors

BF989-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 20V min DS breakdown voltage, operates in the ultra-high frequency band, and supports dual gate depletion mode. This compact surface mount transistor ensures reliable performance up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,501 parts In-Stock

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2,501

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Digiode

USA . 1,739 parts In-Stock

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1,739

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Anansix

USA . 1,051 parts In-Stock

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1,051

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Distributors (Availability)

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Native Components

USA . 429 parts In-Stock

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$0.189

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$0.181

429

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$0.181

Northwest PG Solutions

USA . 1,314 parts In-Stock

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$0.208

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$0.183

1,314

$0.208

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$0.183

One Stop Electronics

USA . 1,207 parts In-Stock

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$25.050

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1,207

$25.050

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UNI Independent Distributors

Spain . 6,090 parts In-Stock

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Corphita

USA . 3,839 parts In-Stock

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Overview

Elevate your designs with the BF989-TAPE-13 from NXP Semiconductors, a leader in innovative technology. This N-channel RF FET is engineered for excellence, offering superior amplification in ultra-high frequency applications. With its compact surface mount design and built-in diode, it ensures seamless integration and superior performance. Experience reliability, robust quality, and unmatched support as you harness the powerful capabilities of NXP's trusted solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer lower on-resistance and higher efficiency compared to P-channel devices, resulting in better performance in amplifier applications.

Configuration: SINGLE WITH BUILT-IN DIODE

A single configuration with a built-in diode simplifies circuit design and enhances reliability by providing protection against reverse polarity.

Transistor Application: AMPLIFIER

Designed primarily for amplification, this FET is ideal for signal processing, ensuring high fidelity and performance.

Surface Mount: YES

Surface mount capability allows for easier integration into modern circuit designs, reducing PCB space and improving manufacturing efficiency.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this FET is robust enough for various applications, enabling safe operation in diverse circuits.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on PCBs, facilitating efficient layout and integration into compact designs.

Terminal Form: GULL WING

Gull wing terminals provide excellent solderability and mechanical stability, ensuring a strong connection to the PCB.

Operating Mode: DUAL GATE, DEPLETION MODE

The dual gate configuration allows for better control over the device's operation, enhancing versatility in various applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the ultra-high frequency band makes this FET suitable for high-speed communication and RF applications.

No. of Terminals: 4

With 4 terminals, this FET provides adequate connections for varied applications while maintaining a compact footprint.

Package Style (Meter): SMALL OUTLINE

The small outline package style aids in reducing the overall size of electronic devices, making it perfect for portable applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing MOS technology, this FET features lower power consumption and higher speed compared to other technologies, making it efficient for digital and analog applications.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C ensures reliability under high-temperature conditions, expanding the FET's application range.

Maximum Drain Current (ID): 0.02 A

With a maximum drain current of 20 mA, this FET can handle moderate power levels, suitable for low-power amplifier circuits.

Terminal Position: DUAL

The dual terminal position aids in effective wiring and integration into complex circuits, facilitating ease of use in design.

Case Connection: SOURCE

Source connection provides seamless integration into circuit designs, ensuring proper functionality and performance in various electrical applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF989-TAPE-13 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

.02 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF989-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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