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BF989-TAPE-7

NXP Semiconductors

BF989-TAPE-7 by NXP Semiconductors

BF989-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 20V min DS breakdown voltage, operates in the ultra-high frequency band, and supports dual gate depletion mode. This compact surface mount device excels in high-temperature environments up to 150 °C.

Median Price

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Lifecycle Status

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3

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1k+

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Digiode

USA . 2,586 parts In-Stock

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Vyrian

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Anansix

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One Stop Electronics

USA . 237 parts In-Stock

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Corphita

USA . 4,215 parts In-Stock

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Northwest PG Solutions

USA . 1,338 parts In-Stock

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Native Components

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UNI Independent Distributors

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Overview

Elevate your RF applications with the BF989-TAPE-7 from NXP Semiconductors, a trusted leader in innovation and quality. This N-channel FET promises exceptional performance in ultra-high frequency amplification, ensuring reliability and efficiency for your designs. With its compact surface mount package and built-in diode, it simplifies integration while maximizing performance. Choose the BF989-TAPE-7 for unmatched value and enhance your projects with top-tier technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package provides good durability and excellent protection against environmental factors, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally offer higher electron mobility, resulting in better performance and efficiency in amplification applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The single configuration with a built-in diode simplifies circuit design by integrating protection against reverse current.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor enhances signal strength, making it ideal for audio and radio frequency applications.

Surface Mount: YES

Surface mount technology allows for compact designs and improved reliability in automated production, facilitating high-density circuit board layouts.

Minimum DS Breakdown Voltage: 20 V

A minimum breakdown voltage of 20V ensures robustness in circuit design, allowing for safe operation in various conditions.

Package Shape: RECTANGULAR

The rectangular package shape offers efficient space utilization on circuit boards, enabling compact system designs.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering characteristics and mechanical stability, ideal for surface mount applications.

Operating Mode: DUAL GATE, DEPLETION MODE

Dual gate and depletion mode operation allows for better control of the output signal, making it versatile for RF applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the ultra high frequency band makes this FET suitable for high-speed applications like RF amplifiers and oscillators.

No. of Terminals: 4

With 4 terminals, this design ensures easy connectivity and stable performance within a compact footprint.

Package Style (Meter): SMALL OUTLINE

The small outline package style enhances integration possibilities in space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology enables low drive power and high input impedance, contributing to energy-efficient designs.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C ensures reliability and performance in demanding environments.

Transistor Element Material: SILICON

Silicon material is known for its excellent electrical properties, making it a standard choice for reliable FET performance.

Maximum Drain Current (ID): 0.02 A

A maximum drain current rating of 20mA supports low power applications, making it suitable for battery-operated devices.

Terminal Position: DUAL

Dual terminal positioning enhances the versatility and flexibility of layout designs in electronic circuits.

Case Connection: SOURCE

With the source as the case connection, thermal management is improved, leading to better performance and reliability.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF989-TAPE-7 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

.02 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF989-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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