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BF244BRLRM

Onsemi

BF244BRLRM by Onsemi

BF244BRLRM by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,102 parts In-Stock

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Digiode

USA . 1,777 parts In-Stock

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Native Components

USA . 896 parts In-Stock

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$306.982

100+ parts

$300.843

1k+ parts

$297.773

10k+ parts

$294.703

896

$306.982

$300.843

$297.773

$294.703

Northwest PG Solutions

USA . 798 parts In-Stock

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$337.681

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798

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SupplyDigital Components

Austria . 7,264 parts In-Stock

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Problanco Electronics

Mexico . 5,727 parts In-Stock

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TANS Electronics

Latvia . 5,176 parts In-Stock

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Corphita

USA . 1,059 parts In-Stock

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Kulean Microsystems

USA . 689 parts In-Stock

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Corohmni

South Africa . 328 parts In-Stock

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UHIMA Technologies

Türkiye . 310 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the BF244BRLRM by Onsemi. Crafted with precision and expertise, this RF Small Signal Field Effect Transistor (FET) offers unparalleled performance and reliability. Ideal for amplifier applications in the ultra-high frequency band, this N-channel transistor is a game-changer in the world of electronics. With its high-quality construction and innovative design, the BF244BRLRM guarantees seamless operation and exceptional results. Elevate your projects to new heights with this top-of-the-line component from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, ensuring a longer lifespan and reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically have better performance characteristics such as higher mobility and faster switching speeds, making them a preferred choice for amplifier applications.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor can handle higher voltages without damage, making it suitable for amplifier applications where voltage fluctuations may occur.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the ultra high-frequency band allows for high-speed signal processing, making this transistor ideal for applications where fast switching and amplification are required.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers high input impedance, low noise, and high gain, making it suitable for amplifier applications where signal amplification is crucial.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF244BRLRM attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.1 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF244BRLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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