Loading...

3N212

Texas Instruments

3N212 by Texas Instruments

3N212 by Texas Instruments is a N-CHANNEL FET with 27V DS Breakdown Voltage, suitable for AMPLIFIER applications. Operating in DUAL GATE mode, it offers 0.05A Drain Current and 0.36W Power Dissipation. Ideal for VERY HIGH FREQUENCY BAND circuits due to its METAL-OXIDE SEMICONDUCTOR technology.

Median Price

$29.565

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ace Electronics

USA . 50 parts In-Stock

1+ parts

$25.000

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$25.000

-

-

-

American Microsemiconductor Inc.

USA . 1,258 parts In-Stock

1+ parts

$34.130

100+ parts

-

1k+ parts

-

10k+ parts

-

1,258

$34.130

-

-

-

Vyrian

USA . 5,919 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,919

-

-

-

-

Digiode

USA . 3,557 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,557

-

-

-

-

Electronic Expediters

USA . 400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

400

-

-

-

-

Sunrise Surplus Inc.

USA . 325 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

325

-

-

-

-

Component Electronics Inc.

Canada . 139 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

139

-

-

-

-

ECAB

Sweden . 16 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

16

-

-

-

-

Halfin

Belgium . 12 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12

-

-

-

-

DF Sales Co.

USA . 9 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9

-

-

-

-

DF Sales Co.

USA . 9 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9

-

-

-

-

Holdelec - ElecDif-Pro

France . 8 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8

-

-

-

-

LittleDiode

UK . 2 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2

-

-

-

-

LWI Electronics Inc

India . 2 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2

-

-

-

-

Prism Electronics

USA . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

Bristol Electronics

USA . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,221 parts In-Stock

1+ parts

$0.928

100+ parts

-

1k+ parts

$1.842

10k+ parts

-

2,221

$0.928

-

$1.842

-

DigiPath Technology Company

USA . 1,309 parts In-Stock

1+ parts

$1.022

100+ parts

$0.940

1k+ parts

-

10k+ parts

-

1,309

$1.022

$0.940

-

-

ChromeModa Solutions

Germany . 2,726 parts In-Stock

1+ parts

$1.043

100+ parts

$0.855

1k+ parts

-

10k+ parts

-

2,726

$1.043

$0.855

-

-

IDEA Electronic Components Group

UK . 9 parts In-Stock

1+ parts

$1.043

100+ parts

-

1k+ parts

$0.939

10k+ parts

-

9

$1.043

-

$0.939

-

Northwest PG Solutions

USA . 596 parts In-Stock

1+ parts

$2.431

100+ parts

-

1k+ parts

-

10k+ parts

-

596

$2.431

-

-

-

AZTECH Wire

Italy . 334 parts In-Stock

1+ parts

$5.627

100+ parts

-

1k+ parts

-

10k+ parts

-

334

$5.627

-

-

-

One Stop Electronics

USA . 1,048 parts In-Stock

1+ parts

$32.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,048

$32.050

-

-

-

Kepictronics

USA . 4,870 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,870

-

-

-

-

Corphita

USA . 4,629 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,629

-

-

-

-

Native Components

USA . 504 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.144

10k+ parts

-

504

-

-

$2.144

-

Assy Fe

Spain . 4 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4

-

-

-

-

Overview

Unleash the power of cutting-edge technology with the Texas Instruments 3N212 RF Small Signal Field Effect Transistor (FET). Crafted with precision and expertise, this N-CHANNEL transistor offers unparalleled performance in amplifier applications. With a robust construction and top-notch materials, this product ensures reliability and efficiency. Ideal for very high-frequency bands, the 3N212 is designed to meet your needs with a maximum drain current of 0.05 A and a minimum DS breakdown voltage of 27 V. Elevate your projects with the superior quality and advanced features of the Texas Instruments 3N212.

Feature Benefit Bullets

Package Body Material: METAL

Metal package offers good heat dissipation, allowing the transistor to operate at high power levels without overheating.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower ON resistance and higher electron mobility, making them efficient for amplification applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification, ensuring optimal performance in signal boosting applications.

Minimum DS Breakdown Voltage: 27 V

High breakdown voltage allows for operation in circuits with varying voltage levels, increasing versatility.

Operating Mode: DUAL GATE, DEPLETION MODE

Dual gate design in depletion mode offers precise control over the output signal, resulting in enhanced amplification.

Maximum Power Dissipation (Abs): 0.36 W

High power dissipation capability means the transistor can handle higher power levels without performance degradation.

Maximum Operating Temperature: 200 °C

With a high operating temperature range, this FET can withstand heat stress in demanding environments.

Maximum Drain Current (ID): 0.05 A

Capable of handling a maximum drain current of 0.05 A, making it suitable for moderate power applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 3N212 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Case Connection:

SOURCE AND SUBSTRATE

Configuration:

Minimum DS Breakdown Voltage:

27 V

Maximum Drain Current (Abs) (ID):

.05 A

Maximum Drain Current (ID):

.05 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.05 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-72

JESD-30 Code:

O-MBCY-W4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, DEPLETION MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

3N212 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-023-7425, 5961010237425, 5961-01-054-3985, 5961010543985, 5961-99-648-4726, 5961996484726, 5961-14-398-3197, 5961143983197

NIIN

010237425, 010543985, 996484726, 143983197

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

New products
from Texas Instruments 7

Similar products 14