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SMMBFJ310LT3

Onsemi

SMMBFJ310LT3 by Onsemi

SMMBFJ310LT3 by Onsemi is an N-CHANNEL RF FET for AMPLIFIER applications. It operates in DEPLETION MODE with a 25V DS Breakdown Voltage and 2.5pF Crss, suitable for ULTRA HIGH FREQUENCY BAND usage. This SMALL OUTLINE transistor has GULL WING terminals and Tin/Lead finish, making it ideal for surface mount configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 4,250 parts In-Stock

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4,250

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Digiode

USA . 383 parts In-Stock

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383

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Nova Conductors

Japan . 83 parts In-Stock

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Ampacity Inc.

Singapore . 910 parts In-Stock

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$2.050

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910

$2.050

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AZTECH Wire

Italy . 371 parts In-Stock

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$13.397

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371

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Kulean Microsystems

USA . 6,352 parts In-Stock

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SupplyDigital Components

Austria . 4,059 parts In-Stock

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Problanco Electronics

Mexico . 1,677 parts In-Stock

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1,677

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Corphita

USA . 1,675 parts In-Stock

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TANS Electronics

Latvia . 869 parts In-Stock

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869

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Corohmni

South Africa . 290 parts In-Stock

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290

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UHIMA Technologies

Türkiye . 259 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Unlock the potential of your RF small signal applications with the SMMBFJ310LT3 by Onsemi. Manufactured by a trusted industry leader, this N-channel FET delivers high-quality performance for amplifier circuits in the ultra-high-frequency band. With its durable plastic/epoxy package and gull wing terminals, this transistor offers reliable operation and easy installation. Experience enhanced signal amplification and seamless integration into your design with the SMMBFJ310LT3 - the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good mechanical strength and thermal stability, making the transistor durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility and lower ON resistance, making them ideal for high-frequency applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in signal amplification circuits.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving space and reducing manufacturing costs.

Minimum DS Breakdown Voltage: 25 V

With a breakdown voltage of 25V, this transistor can handle higher voltages without failure, providing a reliable performance.

Field Effect Transistor Technology: JUNCTION

Junction FETs typically offer low noise and high input impedance, which are desirable characteristics for amplifier applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish ensures good solderability and conductivity, facilitating easier and reliable connections during assembly.

Maximum Feedback Capacitance (Crss): 2.5 pF

Low feedback capacitance minimizes the risk of oscillations and improves stability in amplifier circuits.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) SMMBFJ310LT3 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

2.5 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SMMBFJ310LT3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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