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BF908-TAPE-7

NXP Semiconductors

BF908-TAPE-7 by NXP Semiconductors

BF908-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 12V min DS breakdown voltage, operates in the ultra-high frequency band, and supports dual gate depletion mode. This compact surface mount device ensures efficient performance with a max temp of 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 2,256 parts In-Stock

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Vyrian

USA . 1,214 parts In-Stock

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Anansix

USA . 479 parts In-Stock

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479

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Northwest PG Solutions

USA . 945 parts In-Stock

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$3.183

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One Stop Electronics

USA . 766 parts In-Stock

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$43.050

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UNI Independent Distributors

Spain . 4,948 parts In-Stock

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Corphita

USA . 1,683 parts In-Stock

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Native Components

USA . 863 parts In-Stock

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Overview

Unlock superior performance with the BF908-TAPE-7, a top-tier RF Small Signal FET from NXP Semiconductors. Renowned for innovation and quality, NXP delivers exceptional reliability in demanding applications. This versatile transistor is perfect for amplifiers, optimizing signal integrity in ultra-high frequency scenarios. Experience enhanced efficiency, reduced power consumption, and seamless integration into your projects, ensuring you stay ahead in technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy construction provides durability and protection, making the product reliable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer better performance in terms of speed and efficiency, making them a suitable choice for high-speed applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances protection against reverse polarity, increasing the reliability of the circuit.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this FET can handle signal amplification with high linearity and low distortion.

Surface Mount: YES

Surface mount technology allows for compact designs and automated assembly, leading to reduced production costs.

Minimum DS Breakdown Voltage: 12 V

A minimum breakdown voltage of 12V offers robustness, making it suitable for various electronic circuits and preventing damage from unexpected voltage spikes.

Package Shape: RECTANGULAR

The rectangular shape helps in efficient space utilization on PCBs, making it easy to integrate into tight layouts.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering and provides better mechanical stability for surface mount applications.

Operating Mode: DUAL GATE, DEPLETION MODE

Dual gate configurations allow for better control and flexibility in signal processing applications, enhancing circuit performance.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra-high frequency applications, this FET can efficiently handle high-speed signals, making it ideal for RF applications.

No. of Terminals: 4

A 4-terminal configuration supports various circuit designs, enabling complex functionality within a compact package.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for high-density mounting on circuit boards, optimizing space without sacrificing performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high input impedance and low power consumption, making this FET suitable for battery-operated devices.

Maximum Operating Temperature: 150 °C

A high operating temperature rating ensures reliability in demanding environments, extending the product’s lifespan.

Transistor Element Material: SILICON

Silicon as the base material is widely trusted for its excellent electrical properties, ensuring consistent performance.

Maximum Drain Current (ID): 0.04 A

A maximum drain current of 0.04 A allows the FET to handle moderate loads effectively, making it versatile for various applications.

Terminal Position: DUAL

Dual terminal positioning enhances the flexibility of integration into different circuit layouts, accommodating design preferences.

Case Connection: SOURCE

The source connection design simplifies circuit designs and contributes to faster signal switching times.

Maximum Feedback Capacitance (Crss): 0.045 pF

A low feedback capacitance facilitates high-frequency performance, reducing signal loss and improving overall circuit efficiency.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF908-TAPE-7 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

12 V

Maximum Drain Current (ID):

.04 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.045 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF908-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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