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2N5486RLRP

Onsemi

2N5486RLRP by Onsemi

Onsemi 2N5486RLRP is an N-CHANNEL RF FET with 10 dB Gp, ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND. It has a max power dissipation of 0.31 W, operates in DEPLETION MODE at up to 150 °C, and features a JUNCTION technology with SILICON material.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,439 parts In-Stock

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2,439

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Digiode

USA . 657 parts In-Stock

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657

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Ampacity Inc.

Singapore . 1,528 parts In-Stock

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$1.050

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1,528

$1.050

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Native Components

USA . 455 parts In-Stock

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$7.140

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455

$7.140

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QUARKTWIN TECHNOLOGY LTD

USA . 23,126 parts In-Stock

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TANS Electronics

Latvia . 8,355 parts In-Stock

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Problanco Electronics

Mexico . 7,699 parts In-Stock

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7,699

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SupplyDigital Components

Austria . 6,559 parts In-Stock

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6,559

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GreenTree Electronics

Israel . 5,438 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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2,780

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Kulean Microsystems

USA . 2,172 parts In-Stock

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Corphita

USA . 1,184 parts In-Stock

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UHIMA Technologies

Türkiye . 867 parts In-Stock

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867

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Corohmni

South Africa . 298 parts In-Stock

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298

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Northwest PG Solutions

USA . 206 parts In-Stock

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$6.997

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206

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$6.997

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Overview

Unlock the full potential of your RF applications with the 2N5486RLRP from Onsemi. As a trusted manufacturer in the industry, Onsemi delivers high-quality RF Small Signal Field Effect Transistors that guarantee superior performance and reliability. The 2N5486RLRP is perfect for amplifier applications in the ultra-high-frequency band, providing a minimum power gain of 10 dB. With its N-channel configuration and depletion mode operation, this transistor offers unmatched value and benefits to customers looking for top-notch components for their projects. Experience the difference with Onsemi's 2N5486RLRP and take your RF designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically have better performance characteristics in terms of voltage and current handling compared to P-Channel transistors.

Configuration: SINGLE

Single configuration transistors are easy to use and integrate into circuits, simplifying the design process.

Transistor Application: AMPLIFIER

Designed for amplifier applications, ensuring high signal gain and performance in audio and RF circuits.

Minimum Power Gain (Gp): 10 dB

Having a minimum power gain of 10 dB indicates strong amplification capabilities, ideal for boosting signals in various electronic devices.

Package Shape: ROUND

Round package shape facilitates easy mounting and handling, making it convenient for assembly and installation.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering, ensuring reliable performance in circuit applications.

Operating Mode: DEPLETION MODE

Depletion mode operation allows for control of current flow across the channel, offering flexibility in circuit design and optimization.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra-high frequency applications, ensuring compatibility with high-speed communication systems and RF devices.

No. of Terminals: 3

3 terminals provide necessary connections for input, output, and biasing, offering flexibility in circuit configurations and integration.

Maximum Power Dissipation (Abs): 0.31 W

With a maximum power dissipation of 0.31W, this transistor can handle higher power levels without overheating, ensuring reliability in operation.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers compact size and efficient heat dissipation, making it suitable for space-constrained applications.

Field Effect Transistor Technology: JUNCTION

Utilizing junction technology ensures high performance and efficiency in signal handling, enabling optimal operation in various electronic circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments, ensuring reliable performance in challenging conditions.

Transistor Element Material: SILICON

Silicon-based transistor elements provide excellent electrical properties and reliability, ensuring consistent performance over a wide range of operating conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers excellent solderability and conductivity, ensuring secure connections and reliable performance in circuit applications.

Maximum Drain Current (ID): 0.03 A

With a maximum drain current of 0.03A, this transistor can handle higher current loads, making it suitable for various electronic applications.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting and soldering, ensuring optimal connections and reliable performance in circuit usage.

Peak Reflow Temperature °C: 235

With a peak reflow temperature of 235 °C, this transistor can undergo reflow soldering processes without damage, ensuring ease of assembly and reliable performance.

Maximum Feedback Capacitance (Crss): 1 pF

Having a low feedback capacitance of 1pF minimizes signal loss and distortion, ensuring high signal fidelity and performance in RF applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N5486RLRP attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

10 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N5486RLRP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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