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J309RL

Onsemi

J309RL by Onsemi

J309RL by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a DEPLETION MODE operation, this transistor has a Max Operating Temperature of 125 °C and 2.5pF Max Feedback Capacitance (Crss).

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,765 parts In-Stock

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Vyrian

USA . 1,740 parts In-Stock

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1,740

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Kulean Microsystems

USA . 5,657 parts In-Stock

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5,657

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TANS Electronics

Latvia . 5,512 parts In-Stock

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Problanco Electronics

Mexico . 2,979 parts In-Stock

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2,979

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Corphita

USA . 1,695 parts In-Stock

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1,695

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UHIMA Technologies

Türkiye . 500 parts In-Stock

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500

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Corohmni

South Africa . 387 parts In-Stock

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387

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SupplyDigital Components

Austria . 128 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality J309RL RF Small Signal Field Effect Transistor by Onsemi. With a reputation for excellence, Onsemi ensures top-notch performance and reliability in every product. Ideal for amplifier applications in the ultra-high-frequency band, this N-channel transistor offers unmatched value and benefits to customers. Whether you're a hobbyist or a professional, the J309RL will take your projects to the next level with its superior functionality and ease of use. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have higher electron mobility and faster switching speeds compared to P-channel transistors, making this product suitable for high-speed applications.

Minimum DS Breakdown Voltage: 25 V

With a minimum breakdown voltage of 25V, this transistor can handle higher voltages without experiencing damage, ensuring reliability in high-power circuits.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this transistor can provide high gain and low noise, making it ideal for audio and RF amplification.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers high input impedance and low output impedance, making this transistor suitable for low-power applications where signal fidelity is crucial.

Maximum Feedback Capacitance (Crss): 2.5 pF

With a low feedback capacitance of 2.5 pF, this transistor allows for better high-frequency performance and stability in amplification circuits.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) J309RL attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

2.5 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

J309RL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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