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J309RL1

Onsemi

J309RL1 by Onsemi

J309RL1 by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring DEPLETION MODE operation, this transistor has a Max Operating Temperature of 125 °C and a Crss of 2.5 pF, housed in a CYLINDRICAL package with THROUGH-HOLE terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Digiode

USA . 343 parts In-Stock

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Vyrian

USA . 122 parts In-Stock

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Problanco Electronics

Mexico . 5,100 parts In-Stock

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Corphita

USA . 2,366 parts In-Stock

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TANS Electronics

Latvia . 2,142 parts In-Stock

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SupplyDigital Components

Austria . 1,821 parts In-Stock

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Kulean Microsystems

USA . 490 parts In-Stock

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Corohmni

South Africa . 261 parts In-Stock

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UHIMA Technologies

Türkiye . 139 parts In-Stock

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Overview

Unleash the power of innovation with the J309RL1 by Onsemi. Crafted with precision and expertise, this RF Small Signal Field Effect Transistor is a game-changer in the world of amplifiers. Its N-CHANNEL configuration and ultra-high frequency band make it ideal for a wide range of applications. From enhancing signal strength to boosting performance, this transistor delivers unparalleled value and benefits. Elevate your projects with the quality and reliability that only Onsemi can offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications in different environments.

Polarity or Channel Type: N-CHANNEL

Allows for efficient electron flow and high-performance amplification capabilities.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in electronic projects.

Minimum DS Breakdown Voltage: 25 V

Ensures reliable performance and protects the transistor from voltage surges or spikes.

Package Shape: ROUND

Facilitates easy mounting and installation in circular layouts or spaces.

Terminal Form: THROUGH-HOLE

Enables secure soldering and connection to circuit boards, ensuring stability during operation.

Operating Mode: DEPLETION MODE

Provides enhanced control over the transistor's conduction, allowing for precise signal amplification.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Delivers high-speed performance and excellent signal processing capabilities for demanding applications.

No. of Terminals: 3

Offers versatility in circuit connections and allows for easy integration with other components.

Package Style (Meter): CYLINDRICAL

Facilitates efficient heat dissipation and compact design, ideal for space-constrained applications.

Field Effect Transistor Technology: JUNCTION

Provides high switching speeds and low power consumption, enhancing the overall efficiency of the transistor.

Maximum Operating Temperature: 125 °C

Ensures reliable performance even in high-temperature environments, making it suitable for industrial applications.

Transistor Element Material: SILICON

Offers excellent thermal conductivity and long-term reliability, ensuring consistent performance over time.

Terminal Finish: TIN LEAD

Facilitates secure connections and prevents oxidation, prolonging the lifespan of the transistor.

Terminal Position: BOTTOM

Simplifies PCB layout and enables efficient heat dissipation for stable operation.

Maximum Feedback Capacitance (Crss): 2.5 pF

Minimizes signal distortion and interference, ensuring high-fidelity amplification of input signals.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) J309RL1 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

2.5 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

J309RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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