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J309ZL1

Onsemi

J309ZL1 by Onsemi

J309ZL1 by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a DEPLETION MODE and 2.5pF Crss for high performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Digiode

USA . 449 parts In-Stock

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449

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Vyrian

USA . 172 parts In-Stock

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172

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Kulean Microsystems

USA . 6,650 parts In-Stock

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6,650

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SupplyDigital Components

Austria . 5,307 parts In-Stock

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Problanco Electronics

Mexico . 3,237 parts In-Stock

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Corphita

USA . 1,996 parts In-Stock

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1,996

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Corohmni

South Africa . 447 parts In-Stock

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447

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UHIMA Technologies

Türkiye . 399 parts In-Stock

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399

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TANS Electronics

Latvia . 365 parts In-Stock

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Overview

Elevate your RF signal amplification with the J309ZL1 by Onsemi. Crafted with precision and expertise, this N-CHANNEL FET boasts top-tier quality and reliability that Onsemi is renowned for. Perfect for applications in the ultra-high frequency band, this single-configured amplifier offers unrivaled performance and efficiency. Experience seamless connectivity and enhanced signal strength with the J309ZL1, where cutting-edge technology meets unparalleled value for our customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically have higher mobility and conductivity compared to P-Channel transistors, making this product efficient for signal amplification.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring reliable performance in signal boosting applications.

Minimum DS Breakdown Voltage: 25 V

With a high breakdown voltage, this transistor can handle higher voltage levels without getting damaged, ensuring reliability in various circuits.

Operating Mode: DEPLETION MODE

Depletion mode transistors are normally-on devices, which can be advantageous in certain circuit designs where an 'on' state is required by default.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capable of handling signals in the ultra-high frequency band, making it suitable for applications that require high-speed performance.

Field Effect Transistor Technology: JUNCTION

Junction FETs are known for their high input impedance and low noise characteristics, making them ideal for high-performance amplifier circuits.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising its performance, ensuring reliability in various environments.

Transistor Element Material: SILICON

Silicon transistors are widely used in electronics due to their compatibility with integrated circuits and high performance capabilities.

Maximum Feedback Capacitance (Crss): 2.5 pF

Low feedback capacitance can help reduce signal distortion and improve overall performance in amplification applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) J309ZL1 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

2.5 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

J309ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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