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BLF184XR

NXP Semiconductors

BLF184XR by NXP Semiconductors

BLF184XR by NXP Semiconductors is an N-CHANNEL RF FET with 135V DS Breakdown Voltage, 22.8 dB Power Gain, and operates in the ULTRA HIGH FREQUENCY BAND. It is commonly used as an AMPLIFIER in applications requiring a COMMON SOURCE configuration. The transistor comes in a CERAMIC, METAL-SEALED COFIRED package with FLANGE MOUNT style for surface mounting.

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1k+

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VNN

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Nova Conductors

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One Stop Electronics

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AZTECH Wire

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Ampacity Inc.

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Overview

Unleash the power of innovation with the BLF184XR by NXP Semiconductors. This RF Small Signal Field Effect Transistor (FET) offers unparalleled performance and reliability, making it the top choice for amplifier applications in the ultra-high frequency band. With a minimum power gain of 22.8 dB and a minimum DS breakdown voltage of 135V, this transistor delivers unmatched efficiency and quality. Experience seamless connectivity and superior signal amplification with the BLF184XR, setting a new standard for excellence in the industry. Elevate your projects to new heights with this cutting-edge technology.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired materials in the package body increases durability and reliability, making this product a good choice for long-term use.

Polarity or Channel Type: N-CHANNEL

The N-channel polarity allows for efficient electron flow, making this product ideal for high-performance applications where speed and reliability are crucial.

Configuration: COMMON SOURCE, 2 ELEMENTS

The common source configuration with 2 elements ensures stable and consistent performance, making this product suitable for amplifier applications that require precision.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, this product offers excellent amplification capabilities and is a reliable choice for enhancing signal strength.

Surface Mount: YES

With surface mount capability, this product is easy to install and saves space, making it a convenient choice for compact electronic designs.

Minimum DS Breakdown Voltage: 135 V

With a high minimum breakdown voltage, this product offers superior protection against voltage spikes, ensuring long-term reliability in demanding environments.

Minimum Power Gain (Gp): 22.8 dB

The high minimum power gain provides strong signal amplification, making this product a top choice for applications requiring increased signal strength.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space and easy integration into electronic circuits, making this product versatile and practical for various applications.

Terminal Form: FLAT

The flat terminal form simplifies the connection process and ensures a secure fit, contributing to the overall reliability and performance of the product.

Operating Mode: ENHANCEMENT MODE

Operating in enhancement mode allows for precise control over the transistor's conductivity, making this product ideal for applications where fine-tuning is essential.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the ultra-high frequency band, this product offers fast response times and high-speed performance, making it a reliable choice for applications requiring quick signal processing.

No. of Elements: 2

Featuring 2 elements, this product provides increased functionality and flexibility in circuit design, making it suitable for applications that require multiple operational stages.

No. of Terminals: 4

With 4 terminals, this product offers enhanced connectivity options and allows for more complex circuit configurations, making it a versatile choice for various applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers secure mounting options and ensures stable operation, making this product a reliable choice for installations where stability is crucial.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing metal-oxide semiconductor technology, this product provides efficient performance and low power consumption, making it an energy-efficient choice for electronic applications.

Transistor Element Material: SILICON

Made with silicon, a versatile and reliable semiconductor material, this product offers excellent performance and durability, making it a trusted choice for high-quality electronic circuits.

Terminal Position: DUAL

Featuring dual terminal positions, this product allows for flexible connection options and enables versatile circuit integration, making it a convenient choice for various electronic designs.

Case Connection: SOURCE

The case connection at the source terminal ensures proper grounding and protects against electrical interference, enhancing the overall reliability and performance of the product.

Reference Standard: IEC-60134

Compliant with the IEC-60134 standard, this product meets international quality and safety requirements, ensuring reliability and performance consistency.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BLF184XR attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

135 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFM-F4

No. of Elements:

2

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Minimum Power Gain (Gp):

22.8 dB

Reference Standard:

IEC-60134

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLF184XR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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