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BF545A-TAPE-7

NXP Semiconductors

BF545A-TAPE-7 by NXP Semiconductors

BF545A-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,243 parts In-Stock

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1,243

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Digiode

USA . 1,055 parts In-Stock

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1,055

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Vyrian

USA . 663 parts In-Stock

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663

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Distributors (Availability)

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Native Components

USA . 236 parts In-Stock

1+ parts

$2.070

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236

$2.070

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Northwest PG Solutions

USA . 113 parts In-Stock

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$2.277

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113

$2.277

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One Stop Electronics

USA . 313 parts In-Stock

1+ parts

$35.050

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313

$35.050

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Corphita

USA . 2,886 parts In-Stock

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2,886

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UNI Independent Distributors

Spain . 574 parts In-Stock

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574

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Overview

Unlock exceptional performance with the BF545A-TAPE-7 from NXP Semiconductors, a leader in innovation and quality. This N-channel RF small signal FET is designed for amplifiers, delivering reliability in very high frequency applications. With its compact surface mount design and robust construction, it ensures seamless integration into your projects, providing enhanced efficiency and durability. Choose NXP for unmatched value and superior technology that empowers your next breakthrough!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and provides effective protection against environmental factors, making the transistor reliable for various applications.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors are known for better electron mobility, which translates to higher efficiency and performance in amplifying signals.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces the space required on PCB, allowing for compact designs.

Transistor Application: AMPLIFIER

Designed specifically as an amplifier, this FET is optimized for signal amplification applications, ideal for audio and RF circuits.

Surface Mount: YES

Surface mount technology allows for automated assembly and high-density PCB designs, reducing production costs and board space.

Minimum DS Breakdown Voltage: 30 V

A minimum breakdown voltage of 30V provides flexibility for use in higher voltage circuits, enhancing the transistor's applicability.

Package Shape: RECTANGULAR

The rectangular shape offers efficient use of space on the circuit board and compatibility with a variety of PCB designs.

Terminal Form: GULL WING

Gull wing terminals ensure reliable soldering, improving connection quality, particularly in high-frequency applications.

Operating Mode: DEPLETION MODE

Depletion mode operation allows for lower power consumption and superior linearity in amplifier applications, leading to enhanced signal integrity.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

The ability to operate in very high frequency bands makes this FET suitable for advanced RF applications, providing excellent performance at high frequencies.

No. of Terminals: 3

With three terminals, this design offers a straightforward connection setup, facilitating easy integration into circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package reduces board space usage and enhances design flexibility, allowing for more compact electronic devices.

Field Effect Transistor Technology: JUNCTION

Junction FET technology provides better stability and low noise operation, crucial for precision amplification in electronic devices.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures reliable performance under harsh conditions, making this FET suitable for demanding environments.

Transistor Element Material: SILICON

Silicon offers a well-understood and reliable semiconductor material, ensuring consistent performance and operational efficiency.

Terminal Position: DUAL

Dual terminal positioning enhances access for mounting and soldering, easing the integration process into various electronic systems.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF545A-TAPE-7 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF545A-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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