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2N5246

Texas Instruments

2N5246 by Texas Instruments

2N5246 by Texas Instruments is an N-CHANNEL RF FET with 10 dB Gp for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a very high frequency band and can handle up to 0.36 W power dissipation. The transistor features a SILICON element, 3 terminals, and a CYLINDRICAL package shape.

Median Price

$0.383

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 24,824 parts In-Stock

1+ parts

-

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$0.383

1k+ parts

$0.318

10k+ parts

$0.283

24,824

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$0.383

$0.318

$0.283

DigiKey

USA . 23,124 parts In-Stock

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$0.330

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23,124

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$0.330

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Verical

USA . 16,901 parts In-Stock

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$0.398

10k+ parts

$0.354

16,901

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$0.398

$0.354

Distributors (In-Stock)

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Digiode

USA . 4,121 parts In-Stock

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$0.298

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4,121

$0.298

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Vyrian

USA . 3,118 parts In-Stock

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$0.314

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3,118

$0.314

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TEDSS.com

USA . 13,810 parts In-Stock

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$0.500

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$0.350

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13,810

$0.500

$0.350

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Bristol Electronics

USA . 1,615 parts In-Stock

1+ parts

$0.750

100+ parts

$0.375

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$0.150

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-

1,615

$0.750

$0.375

$0.150

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American Microsemiconductor Inc.

USA . 18,734 parts In-Stock

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$2.290

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$2.290

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R&J Components

USA . 9,313 parts In-Stock

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PUI

USA . 6,095 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 6,000 parts In-Stock

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Anansix

USA . 1,945 parts In-Stock

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Dan-Mar Components

USA . 1,615 parts In-Stock

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1,615

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Semi Source

USA . 200 parts In-Stock

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200

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American Connector Supply Corp

USA . 96 parts In-Stock

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J & M Industries LLC

USA . 50 parts In-Stock

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50

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ECAB

Sweden . 50 parts In-Stock

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50

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DF Sales Co.

USA . 36 parts In-Stock

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36

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DF Sales Co.

USA . 36 parts In-Stock

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36

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Resion

USA . 20 parts In-Stock

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20

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Holdelec - ElecDif-Pro

France . 9 parts In-Stock

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9

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Prism Electronics

USA . 4 parts In-Stock

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4

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First Choice Components Inc.

USA . 3 parts In-Stock

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3

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LittleDiode

UK . 1 parts In-Stock

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1

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Distributors (Availability)

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Ampacity Inc.

Singapore . 16,105 parts In-Stock

1+ parts

$0.267

100+ parts

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16,105

$0.267

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Corphita

USA . 5,295 parts In-Stock

1+ parts

$0.283

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5,295

$0.283

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Parana Technologies

USA . 2,187 parts In-Stock

1+ parts

$0.526

100+ parts

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$1.638

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2,187

$0.526

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$1.638

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DigiPath Technology Company

USA . 1,966 parts In-Stock

1+ parts

$0.579

100+ parts

$0.533

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1,966

$0.579

$0.533

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IDEA Electronic Components Group

UK . 620 parts In-Stock

1+ parts

$0.591

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$0.532

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620

$0.591

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ChromeModa Solutions

Germany . 72 parts In-Stock

1+ parts

$0.591

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$0.485

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72

$0.591

$0.485

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QUARKTWIN TECHNOLOGY LTD

USA . 28,423 parts In-Stock

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28,423

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Continental Prestige Electronics

USA . 26,973 parts In-Stock

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$0.380

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26,973

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Metaverse IC Inc.

Canada . 4,000 parts In-Stock

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Northwest PG Solutions

USA . 1,996 parts In-Stock

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$3.457

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1,996

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$3.457

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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1,970

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Supply Digital

USA . 1,953 parts In-Stock

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1,953

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Native Components

USA . 311 parts In-Stock

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$3.422

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311

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$3.422

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Perfect Parts

USA . 28 parts In-Stock

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28

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Assy Fe

Spain . 25 parts In-Stock

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25

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Overview

Discover the power of the Texas Instruments 2N5246 RF Small Signal Field Effect Transistor. With a reputation for superior quality and reliability, Texas Instruments delivers cutting-edge technology in a compact package. Ideal for amplifier applications in the very high frequency band, this N-channel transistor offers a minimum power gain of 10 dB and maximum power dissipation of 0.36 W. Unlock new possibilities in your electronic designs with the 2N5246 and experience unmatched performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good heat dissipation and helps in maintaining the physical integrity of the transistor, making it durable and reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally offer higher electron mobility and faster switching speeds compared to P-channel FETs, making them suitable for applications in amplifiers where speed is important.

Configuration: SINGLE

Single configuration simplifies the circuit design and reduces complexity, making it easier to incorporate into amplifier circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor is optimized for high power gain across a wide range of frequencies, making it ideal for amplifier applications.

Minimum Power Gain (Gp): 10 dB

With a minimum power gain of 10 dB, this transistor provides a significant amplification of the input signal, ensuring high performance in amplifier circuits.

Package Shape: ROUND

The round shape of the package allows for easy mounting and integration into electronic circuits, providing a compact and space-saving solution.

Terminal Form: WIRE

Wire terminals provide a secure connection and simple installation process, ensuring reliable performance and ease of use in amplifier circuits.

Operating Mode: DEPLETION MODE

Depletion mode operation allows for easy control of the transistor's conductance, making it suitable for amplifier applications where precise signal amplification is required.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Designed for very high frequency operation, this transistor can amplify signals across a wide frequency range, making it versatile for use in various amplifier applications.

No. of Terminals: 3

Having 3 terminals simplifies the connection and circuit layout, making it easier to integrate into amplifier circuits and reducing the chance of wiring errors.

Maximum Power Dissipation (Abs): 0.36 W

With a maximum power dissipation of 0.36 W, this transistor can handle high power levels without overheating, ensuring reliable and stable performance in amplifier circuits.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact and durable housing for the transistor, offering protection against physical damage and ensuring long-term reliability in amplifier applications.

Field Effect Transistor Technology: JUNCTION

Junction technology provides low noise and high input impedance, making this transistor suitable for high-fidelity amplifier applications where signal quality is crucial.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures and maintain stability in amplifier circuits under harsh environmental conditions.

Transistor Element Material: SILICON

Silicon material offers high thermal conductivity and reliability, making it suitable for high power and high frequency amplifier applications where performance and durability are essential.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and connection in amplifier circuits, ensuring proper heat dissipation and efficient signal amplification.

Maximum Feedback Capacitance (Crss): 1 pF

With a low maximum feedback capacitance of 1 pF, this transistor minimizes signal distortion and ensures high stability in amplifier circuits, making it a reliable choice for sensitive applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N5246 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Configuration:

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

10 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N5246 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-230-8002, 5961002308002

NIIN

002308002

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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