Loading...

BF556B-TAPE-7

NXP Semiconductors

BF556B-TAPE-7 by NXP Semiconductors

BF556B-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,743 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,743

-

-

-

-

Digiode

USA . 2,548 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,548

-

-

-

-

Vyrian

USA . 143 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

143

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 470 parts In-Stock

1+ parts

$6.856

100+ parts

-

1k+ parts

-

10k+ parts

-

470

$6.856

-

-

-

One Stop Electronics

USA . 1,113 parts In-Stock

1+ parts

$45.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,113

$45.050

-

-

-

UNI Independent Distributors

Spain . 5,232 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,232

-

-

-

-

Corphita

USA . 2,523 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,523

-

-

-

-

Northwest PG Solutions

USA . 1,476 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$6.719

10k+ parts

-

1,476

-

-

$6.719

-

Overview

Unlock exceptional performance with the BF556B-TAPE-7 from NXP Semiconductors, a leader in innovative technology. This N-channel RF small signal FET is engineered for superior amplification, making it ideal for high-frequency applications. Its robust design ensures reliability even in demanding environments, while its compact surface mount configuration simplifies integration into your projects. Elevate your designs with unmatched quality and efficiency from NXP!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protection from environmental factors, making this FET suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer higher electron mobility, which can result in better performance and efficiency in amplification applications.

Configuration: SINGLE

Single configuration simplifies design and integration into circuits, making it an effective choice for compact applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this FET can enhance signal strength, making it ideal for audio and RF applications.

Surface Mount: YES

Surface mount technology allows for smaller PCB designs and easier automated assembly, contributing to overall production efficiency.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this FET provides a robust performance in various voltage applications, enhancing reliability.

Package Shape: RECTANGULAR

The rectangular shape aids in efficient layout on PCBs, optimizing space usage and facilitating effective heat dissipation.

Terminal Form: GULL WING

Gull wing terminals enhance soldering reliability and provide stable connections, which are crucial for high-frequency applications.

Operating Mode: DEPLETION MODE

Depletion mode operation allows for greater control over the current flow, enabling efficient performance in various circuit designs.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Being suitable for very high frequency applications makes this FET ideal for advanced RF communications, improving transmission quality.

No. of Terminals: 3

With three terminals, this FET offers a simple interface for easy integration, minimizing complexity in circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for space-saving designs in electronic devices, catering to the demand for compact solutions.

Field Effect Transistor Technology: JUNCTION

Junction technology enhances the stability and performance of the FET, making it reliable under a range of operating conditions.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C allows this FET to function efficiently in demanding environments, increasing its versatility.

Transistor Element Material: SILICON

Silicon material provides excellent electrical characteristics and thermal stability, ensuring optimal performance and longevity.

Terminal Position: DUAL

Dual terminal positioning aids in easier circuit layout and enhances connectivity options, making it adaptable for various design requirements.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF556B-TAPE-7 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF556B-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 17