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J308RLRA

Onsemi

J308RLRA by Onsemi

J308RLRA by Onsemi is an N-CHANNEL RF FET with a 25V DS breakdown voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a SINGLE configuration, it has a Crss of 2.5 pF and operates in DEPLETION MODE with a TIN LEAD finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,310 parts In-Stock

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Digiode

USA . 1,191 parts In-Stock

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TANS Electronics

Latvia . 6,229 parts In-Stock

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SupplyDigital Components

Austria . 5,021 parts In-Stock

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Problanco Electronics

Mexico . 3,260 parts In-Stock

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Kulean Microsystems

USA . 3,191 parts In-Stock

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Corphita

USA . 530 parts In-Stock

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Corohmni

South Africa . 173 parts In-Stock

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UHIMA Technologies

Türkiye . 71 parts In-Stock

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Overview

Elevate your signal amplification with the Onsemi J308RLRA RF Small Signal Field Effect Transistor. Manufactured by Onsemi, a trusted name in semiconductor technology, this N-channel transistor offers superior performance in ultra-high frequency applications. With a minimum DS breakdown voltage of 25V and a maximum feedback capacitance of 2.5 pF, this transistor is ideal for amplifiers. Experience the quality and reliability of Onsemi products while enjoying the value and benefits that the J308RLRA brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance characteristics and higher efficiency compared to P-channel transistors.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity.

Transistor Application: AMPLIFIER

Designed specifically for amplification applications, ensuring optimal performance in amplifying signals.

Minimum DS Breakdown Voltage: 25 V

With a minimum breakdown voltage of 25V, this transistor can handle higher voltage levels without getting damaged.

Package Shape: ROUND

Round shape allows for easier installation and space-saving in circuit layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection to the circuit board.

Operating Mode: DEPLETION MODE

Depletion mode operation enables precise control over the transistor's characteristics for specific applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Optimized for ultra-high frequency applications, ensuring reliable performance in high-frequency circuits.

No. of Terminals: 3

With 3 terminals, this transistor offers flexibility in circuit connections and configurations.

Package Style (Meter): CYLINDRICAL

Cylindrical package style enhances ease of handling and installation in electronic devices.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers superior performance and efficiency compared to other types of FETs.

Transistor Element Material: SILICON

Silicon material provides excellent semiconductor properties for efficient signal amplification.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and reliable connections in the circuit.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting and connection on the circuit board.

Maximum Feedback Capacitance (Crss): 2.5 pF

Low feedback capacitance minimizes signal distortion and improves overall amplifier performance.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) J308RLRA attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

2.5 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

J308RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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