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BF909R-TAPE-13

NXP Semiconductors

BF909R-TAPE-13 by NXP Semiconductors

BF909R-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 7V, operates in the ultra-high frequency band, and supports dual gate enhancement mode. This compact surface mount device ensures efficient performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 3,840 parts In-Stock

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Anansix

USA . 2,032 parts In-Stock

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Vyrian

USA . 1,180 parts In-Stock

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One Stop Electronics

USA . 978 parts In-Stock

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$52.050

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UNI Independent Distributors

Spain . 5,453 parts In-Stock

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Northwest PG Solutions

USA . 1,621 parts In-Stock

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Corphita

USA . 1,387 parts In-Stock

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Native Components

USA . 353 parts In-Stock

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Overview

Elevate your designs with the BF909R-TAPE-13 from NXP Semiconductors, a trusted leader in innovation and quality. This high-performance RF Small Signal FET delivers exceptional reliability for amplifiers in ultra-high frequency applications. Its compact surface mount design ensures easy integration while providing powerful signal enhancement. Choose NXP for unmatched durability and efficiency — where cutting-edge technology meets real-world performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and environmental resistance, making the product reliable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer higher efficiency and better performance in amplification and switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances protection against reverse polarity, increasing the robustness of the device.

Transistor Application: AMPLIFIER

Designed for amplification, making it ideal for use in audio, RF, and signal processing applications.

Surface Mount: YES

Surface mount technology allows for compact design and efficient use of board space, suitable for modern electronic devices.

Minimum DS Breakdown Voltage: 7 V

A breakdown voltage of 7 V ensures the transistor can handle small voltage spikes, enhancing reliability.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on PCBs, allowing for efficient placement and soldering.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and provide mechanical stability during operation.

Operating Mode: DUAL GATE, ENHANCEMENT MODE

The dual gate technology enhances linearity and gain control, making it suitable for high-frequency applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

The ability to operate in the UHF band expands its usability in telecommunications and broadcasting.

No. of Terminals: 4

A 4-terminal design simplifies circuit integration while providing necessary connections for its operation.

Package Style (Meter): SMALL OUTLINE

The small outline package is ideal for space-constrained applications, promoting compact device design.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology ensures low power consumption and high input impedance, making it energy efficient.

Maximum Operating Temperature: 150 °C

An operating temperature of 150 °C allows for use in high-heat environments, offering versatile application options.

Transistor Element Material: SILICON

Silicon as the base material provides excellent thermal stability and performance consistency.

Maximum Drain Current (ID): 0.04 A

With a maximum drain current of 0.04 A, this transistor can drive moderate loads effectively.

Terminal Position: DUAL

Dual terminal positioning enables flexible circuit design and enhances connectivity options.

Case Connection: SOURCE

Having the source as the case connection simplifies thermal design considerations and enhances heat dissipation.

Maximum Feedback Capacitance (Crss): 0.05 pF

Low feedback capacitance enhances the speed of operation, making it suitable for high-frequency applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF909R-TAPE-13 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

7 V

Maximum Drain Current (ID):

.04 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.05 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF909R-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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