Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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3SK167-2 by Onsemi is an N-CHANNEL RF FET with max drain current of 0.055A and power dissipation of 0.2W. Ideal for applications requiring small signal amplification in high-frequency circuits up to 125 °C ambient temperature.
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N-CHANNEL FETs are known for their high input impedance and low output impedance, making them suitable for high frequency applications and low noise operation.
With a maximum drain current of 0.055A, this FET can handle moderate power levels efficiently, making it suitable for a variety of small signal applications.
Metal semiconductor FETs offer high frequency performance and low noise characteristics, making them ideal for RF applications where signal quality is crucial.
With a maximum power dissipation of 0.2W, this FET can operate efficiently without overheating, ensuring long-term reliability in various operating conditions.
Operating at a maximum temperature of 125 °C allows this FET to withstand high temperature environments, making it suitable for applications where thermal stability is essential.
The maximum drain current of 0.055A indicates the FET's ability to handle current flow effectively, ensuring reliable performance in small signal applications.
RF Small Signal Field Effect Transistors (FET) 3SK167-2 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Field Effect Transistor Technology:
Maximum Operating Temperature:
Polarity or Channel Type:
Maximum Power Dissipation Ambient:
Sub-Category:
3SK167-2 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.21.00.95
SB
8541.21.00.80
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
0462-201-16141
TE Connectivity
TE Connectivity's 0462-201-16141 is a CRIMP terminal with MACHINED contact design. It operates b/w -55 to 125 °C, suitable for wire gauges from 20 to 16 AWG. With a rated current of 13A, it is ideal for applications requiring FEMALE ROUND PIN-SOCKET contacts.
BAV99
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Transpro Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Breakdown Voltage: 21.1 V; Maximum Clamping Voltage: 29.2 V;
1N4148
Invensys Sensor Systems
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; Maximum Repetitive Peak Reverse Voltage: 100 V;
Hitachi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Lite-on Semiconductor
2N7002
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Transistor Application: SWITCHING;
BSS138
Vishay Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
Onsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;
2N2222A
Good-ark Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;
Surge Components
International Semiconductor
MBRS130LT3G
MBRS130LT3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.445V. It operates b/w -65 to 125°C, has a reverse test voltage of 30V, and is ideal for power applications due to its small outline package style.
FDN5618P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
Itt Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
Pro-an Electronic
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Polarity: BIDIRECTIONAL; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V;
Rugao Dachang Electronic
RC0402FR-0710KL
Yageo
Yageo's RC0402FR-0710KL is a 10000 ohm SMT fixed resistor with 1% tolerance, suitable for applications requiring a rated power dissipation of 0.0625 W. With a temperature coefficient of 100 ppm/°C, it operates b/w -55 to 155 °C, making it ideal for various electronic circuits.
ULN2803ADWRG4
Texas Instruments
ULN2803ADWRG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output, and built-in transient protection. It operates b/w -40 to 85 °C with a max supply voltage of 3 V. Ideal for applications requiring sink current flow direction in a small outline package style.
87832-1420
Molex
87832-1420 by Molex is a 14-contact board connector with 0.079" pitch, suitable for commercial applications. It features matte tin over nickel finish, glass-filled polyamide insulator, and polarization key for easy assembly. Withstanding voltage of 1400VAC and operating temperature range from -55 to 105°C make it reliable for various electronic devices.
BF244BRL1
BF244BRL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
PD84001
STMicroelectronics
PD84001 by STMicroelectronics is an N-CHANNEL RF Small Signal FET with a min DS Breakdown Voltage of 18V. It is used as an amplifier in the ULTRA HIGH FREQUENCY BAND, with a max Drain Current of 1.5A and a Power Dissipation of 6W.
CLF1G0060S-10U
NXP Semiconductors
CLF1G0060S-10U by NXP Semiconductors is a high-performance N-channel FET designed for C-band amplification. It features a 150V breakdown voltage, operates in depletion mode, and utilizes gallium nitride technology for superior efficiency. Ideal for RF applications, it comes in a flatpack ceramic package.
2N4221
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Drain Current (ID): .015 A; Field Effect Transistor Technology: JUNCTION; Terminal Form: WIRE;
934055134215
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Position: DUAL; No. of Terminals: 4; Package Shape: RECTANGULAR;
BF1100R
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Finish: MATTE TIN; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; JESD-30 Code: R-PDSO-G4;
BF1211
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL;
ATF-36163-TR1G
Agilent Technologies
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e3; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 1;
BLM7G1822S-40PBG
RF Small Signal Field-Effect Transistors;
BF990ATRL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: AMPLIFIER; Maximum Drain Current (ID): .03 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BF512T/R
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Position: DUAL; Terminal Form: GULL WING;
SMMBFJ309LT1G
SMMBFJ309LT1G by Onsemi is an N-CHANNEL RF FET with a max power dissipation of 0.225W and operating temp of 150°C. It is surface mountable and features JUNCTION technology, making it ideal for small outline applications in electronics requiring high-frequency signal amplification.
2N4416A
Linear Integrated Systems
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Operating Mode: DEPLETION MODE; Additional Features: LOW NOISE;
BLF184XRS
Ampleon Netherlands B V
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum Power Gain (Gp): 22.8 dB; Case Connection: SOURCE; Terminal Position: DUAL;
2N5485-AMMO
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Qualification: Not Qualified; Terminal Position: BOTTOM; Minimum DS Breakdown Voltage: 25 V;
2N5484RLRA
2N5484RLRA by Onsemi is an N-CHANNEL RF FET with 16 dB Gp for AMPLIFIER applications. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance with 0.03 A ID. Featuring JUNCTION tech and 1 pF Crss, this THROUGH-HOLE transistor has a CYLINDRICAL package ideal for RF circuits.
CLF1G0035-100PU
NXP Semiconductors' CLF1G0035-100PU is an N-CHANNEL RF FET with 150V DS breakdown voltage. It features a common source configuration, suitable for S BAND applications like amplifiers. The transistor utilizes high electron mobility GaN technology in a ceramic-metal package with flange mount style.
BF998WR,115
NXP Semiconductors' BF998WR,115 is an N-CHANNEL RF FET with a built-in diode for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a max drain current of 0.03A and operates in the ULTRA HIGH FREQUENCY BAND. With a package style of SMALL OUTLINE, it can handle up to 150°C operating temperature.
MMBF5484
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; No. of Terminals: 3; Transistor Element Material: SILICON;
FLU17XM
Fujitsu Semiconductor America
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Case Connection: SOURCE; No. of Elements: 1;
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3SK168B
N-CHANNEL; Maximum Drain Current (ID): .055 A; Maximum Operating Temperature: 125 Cel; Maximum Drain Current (Abs) (ID): .055 A; Maximum Power Dissipation Ambient: .25 W; Field Effect Transistor Technology: METAL SEMICONDUCTOR;
3SK168C
N-CHANNEL; Maximum Drain Current (ID): .055 A; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation Ambient: .25 W; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .055 A;
3SK168E
N-CHANNEL; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation Ambient: .25 W; Field Effect Transistor Technology: METAL SEMICONDUCTOR;
3SK167-4
N-CHANNEL; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation Ambient: .2 W; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .055 A; Maximum Drain Current (ID): .055 A;
3SK168
N-CHANNEL; Maximum Operating Temperature: 125 Cel; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .055 A; Maximum Drain Current (ID): .055 A; Maximum Power Dissipation Ambient: .25 W;
3SK168D
N-CHANNEL; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation Ambient: .25 W; JESD-609 Code: e0;
3SK167-5
N-CHANNEL; Maximum Drain Current (ID): .055 A; Maximum Operating Temperature: 125 Cel; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .055 A; Maximum Power Dissipation Ambient: .2 W;
3SK167-3
N-CHANNEL; Maximum Drain Current (Abs) (ID): .055 A; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Drain Current (ID): .055 A; Maximum Power Dissipation Ambient: .2 W; Maximum Operating Temperature: 125 Cel;
3SK167
N-CHANNEL; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Power Dissipation Ambient: .2 W; Maximum Operating Temperature: 125 Cel; Maximum Drain Current (ID): .055 A; Maximum Drain Current (Abs) (ID): .055 A;
3SK127-YTE85L
Toshiba
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Finish: TIN LEAD; Qualification: Not Qualified;
3SK127-Y
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Terminal Form: GULL WING; Maximum Drain Current (ID): .03 A;
3SK126-YTE85L
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; JESD-609 Code: e0; Case Connection: SOURCE;
3SK126
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; JESD-609 Code: e0; Package Shape: RECTANGULAR;
3SK127-YTE85R
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 15 V; Terminal Form: GULL WING;
3SK126-OTE85R
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G4; Terminal Form: GULL WING; Maximum Drain Current (ID): .03 A;
3SK126-YTE85R
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 125 Cel; Package Style (Meter): SMALL OUTLINE; JESD-609 Code: e0;
3SK127
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Drain Current (ID): .03 A; Package Shape: RECTANGULAR;
3SK126TE85L
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Finish: TIN LEAD; Minimum DS Breakdown Voltage: 15 V; Maximum Operating Temperature: 125 Cel;
3SK126-O
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 125 Cel; Terminal Position: DUAL;
Sanyo Electric
N-CHANNEL; Maximum Operating Temperature: 125 Cel; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Drain Current (ID): .055 A; Field Effect Transistor Technology: METAL SEMICONDUCTOR;
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