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2N5484RLRA

Onsemi

2N5484RLRA by Onsemi

2N5484RLRA by Onsemi is an N-CHANNEL RF FET with 16 dB Gp for AMPLIFIER applications. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance with 0.03 A ID. Featuring JUNCTION tech and 1 pF Crss, this THROUGH-HOLE transistor has a CYLINDRICAL package ideal for RF circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,299 parts In-Stock

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Digiode

USA . 100 parts In-Stock

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100

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Problanco Electronics

Mexico . 7,280 parts In-Stock

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Kulean Microsystems

USA . 6,327 parts In-Stock

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TANS Electronics

Latvia . 4,530 parts In-Stock

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SupplyDigital Components

Austria . 3,468 parts In-Stock

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Northwest PG Solutions

USA . 2,177 parts In-Stock

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Corphita

USA . 1,461 parts In-Stock

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UHIMA Technologies

Türkiye . 459 parts In-Stock

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Corohmni

South Africa . 228 parts In-Stock

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Native Components

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Overview

Enhance your amplifier projects with the 2N5484RLRA RF Small Signal Field Effect Transistor by Onsemi. With a reputation for high-quality manufacturing, Onsemi delivers top-notch products that exceed industry standards. This N-CHANNEL transistor offers exceptional performance in the ultra-high frequency band, providing a power gain of 16 dB. Perfect for applications requiring precise amplification, this transistor is a reliable and efficient choice for your electronic projects. Experience the value and benefits that Onsemi brings to the table with the 2N5484RLRA.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility and lower resistance, making them more efficient for amplification purposes.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, reducing complexity and potential failure points.

Transistor Application: AMPLIFIER

Designed specifically for amplification applications, ensuring optimal performance in signal boosting.

Minimum Power Gain (Gp): 16 dB

Minimum power gain of 16 dB indicates strong amplification capability, providing high signal output compared to input.

Package Shape: ROUND

Round package shape allows for easy mounting and integration in various electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure connections and easy soldering, enhancing reliability in circuit assembly.

Operating Mode: DEPLETION MODE

Depletion mode operation provides controlled current flow and allows for precise manipulation of signal amplification.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra-high frequency band operations, suitable for applications requiring high-speed signal processing.

No. of Terminals: 3

Three terminals offer flexibility in circuit configurations and input/output options for versatile use.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a compact form factor for space-constrained applications.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers high efficiency and low noise operation, ideal for signal amplification.

Transistor Element Material: SILICON

Silicon material ensures consistent and reliable performance over a wide temperature range for long-term usage.

Maximum Drain Current (ID): 0.03 A

Maximum drain current of 0.03 A indicates capability to handle moderate power levels for amplification without overheating.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates easy PCB mounting and connection, improving overall circuit layout and design.

Maximum Feedback Capacitance (Crss): 1 pF

Low feedback capacitance of 1 pF minimizes signal distortion and ensures high-fidelity amplification output.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N5484RLRA attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Minimum Power Gain (Gp):

16 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N5484RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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