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BF245

Onsemi

BF245 by Onsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Finish: TIN LEAD; No. of Elements: 1; Operating Mode: DEPLETION MODE;

Median Price

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Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 9,743 parts In-Stock

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Vyrian

USA . 6,858 parts In-Stock

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6,858

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Anansix

USA . 2,766 parts In-Stock

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2,766

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ECAB

Sweden . 500 parts In-Stock

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500

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LittleDiode

UK . 71 parts In-Stock

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71

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Holdelec - ElecDif-Pro

France . 19 parts In-Stock

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GES GmbH

Germany . 10 parts In-Stock

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10

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Prism Electronics

USA . 1 parts In-Stock

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1

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Distributors (Availability)

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Parana Technologies

USA . 631 parts In-Stock

1+ parts

$0.926

100+ parts

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1k+ parts

$1.841

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631

$0.926

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$1.841

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DigiPath Technology Company

USA . 1,111 parts In-Stock

1+ parts

$1.020

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$0.939

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1,111

$1.020

$0.939

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ChromeModa Solutions

Germany . 3,645 parts In-Stock

1+ parts

$1.041

100+ parts

$0.854

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3,645

$1.041

$0.854

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IDEA Electronic Components Group

UK . 1,365 parts In-Stock

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$1.041

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$0.937

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$1.041

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$0.937

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Modulus Dynamics

Lithuania . 6,364 parts In-Stock

1+ parts

$1.102

100+ parts

$1.058

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$1.014

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6,364

$1.102

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$1.014

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AZTECH Wire

Italy . 758 parts In-Stock

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$9.086

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758

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One Stop Electronics

USA . 2,412 parts In-Stock

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$221.100

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$221.100

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Problanco Electronics

Mexico . 8,310 parts In-Stock

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Corphita

USA . 7,320 parts In-Stock

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Northwest PG Solutions

USA . 5,980 parts In-Stock

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SupplyDigital Components

Austria . 3,778 parts In-Stock

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Kulean Microsystems

USA . 2,121 parts In-Stock

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TANS Electronics

Latvia . 1,768 parts In-Stock

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1,768

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Native Components

USA . 1,638 parts In-Stock

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$2.431

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1,638

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$2.431

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UNI Independent Distributors

Spain . 1,080 parts In-Stock

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1,080

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UHIMA Technologies

Türkiye . 739 parts In-Stock

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739

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Corohmni

South Africa . 54 parts In-Stock

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54

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Assy Fe

Spain . 29 parts In-Stock

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Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF245 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.1 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF245 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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