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BF909

NXP Semiconductors

BF909 by NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Qualification: Not Qualified; Terminal Form: GULL WING; Transistor Application: AMPLIFIER;

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 95,000 parts In-Stock

1+ parts

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95,000

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LWI Electronics Inc

India . 15,550 parts In-Stock

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15,550

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PC Components Company LLC

USA . 3,000 parts In-Stock

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3,000

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Bristol Electronics

USA . 3,000 parts In-Stock

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3,000

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Digiode

USA . 2,999 parts In-Stock

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2,999

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Anansix

USA . 1,675 parts In-Stock

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Vyrian

USA . 225 parts In-Stock

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225

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Distributors (Availability)

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One Stop Electronics

USA . 784 parts In-Stock

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$39.050

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784

$39.050

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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Assy Fe

Spain . 47,835 parts In-Stock

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Kepictronics

USA . 25,758 parts In-Stock

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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15,000

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A-Z Elektronik GmbH

Germany . 9,000 parts In-Stock

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Corphita

USA . 4,686 parts In-Stock

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Lixinc

USA . 4,486 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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UNI Independent Distributors

Spain . 2,853 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,800 parts In-Stock

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1,800

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Northwest PG Solutions

USA . 1,035 parts In-Stock

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Perfect Parts

USA . 263 parts In-Stock

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263

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Native Components

USA . 4 parts In-Stock

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Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF909 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

7 V

Maximum Drain Current (Abs) (ID):

.04 A

Maximum Drain Current (ID):

.04 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.05 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

4

Operating Mode:

DUAL GATE, ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF909 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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