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COMPLEX RF Small Signal Field Effect Transistors (FET) 12

RF Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
BF1100,215 by NXP Semiconductors

BF1100,215

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 14 V;

LOW NOISE

SOURCE

COMPLEX

14 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.035 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

2

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF1100R,215 by NXP Semiconductors

BF1100R,215

NXP Semiconductors

NXP Semiconductors' BF1100R,215 is an N-CHANNEL RF FET for AMPLIFIER applications. It operates in DUAL GATE ENHANCEMENT MODE with a 14V DS Breakdown Voltage and 0.03A Drain Current. This ULTRA HIGH FREQUENCY transistor has a PLASTIC/EPOXY body, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.

LOW NOISE

SOURCE

COMPLEX

14 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.035 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

2

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF1100WR,115 by NXP Semiconductors

BF1100WR,115

NXP Semiconductors

NXP Semiconductors' BF1100WR,115 is an N-CHANNEL RF FET for AMPLIFIER applications. It operates in DUAL GATE, ENHANCEMENT MODE with a 14V DS Breakdown Voltage and 0.03A Drain Current. This ULTRA HIGH FREQUENCY transistor has a PLASTIC/EPOXY body, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.

LOW NOISE

SOURCE

COMPLEX

14 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.035 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

2

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF1102R,115 by NXP Semiconductors

BF1102R,115

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Additional Features: LOW NOISE; Transistor Element Material: SILICON; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

LOW NOISE

COMPLEX

7 V

.04 A

.04 A

METAL-OXIDE SEMICONDUCTOR

.05 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G6

e3

2

6

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF1211,215 by NXP Semiconductors

BF1211,215

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Terminal Finish: TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

LOW NOISE

SOURCE

COMPLEX

6 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.03 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

2

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.18 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF1211R,215 by NXP Semiconductors

BF1211R,215

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Terminal Form: GULL WING; Operating Mode: DUAL GATE, ENHANCEMENT MODE;

LOW NOISE

SOURCE

COMPLEX

6 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.03 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

2

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.18 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF1211WR,115 by NXP Semiconductors

BF1211WR,115

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; JESD-30 Code: R-PDSO-G4; Qualification: Not Qualified;

LOW NOISE

SOURCE

COMPLEX

6 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.03 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

2

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.18 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF904WR,115 by NXP Semiconductors

BF904WR,115

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; Maximum Feedback Capacitance (Crss): .035 pF; Terminal Finish: TIN;

LOW NOISE

SOURCE

COMPLEX

7 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.035 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

2

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.28 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF909,215 by NXP Semiconductors

BF909,215

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Drain Current (ID): .04 A; No. of Elements: 2; Minimum DS Breakdown Voltage: 7 V;

LOW NOISE

SOURCE

COMPLEX

7 V

.04 A

.04 A

METAL-OXIDE SEMICONDUCTOR

.05 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

2

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF909WR,115 by NXP Semiconductors

BF909WR,115

NXP Semiconductors

BF909WR,115 by NXP Semiconductors is an N-CHANNEL RF Small Signal FET with a PLASTIC/EPOXY package. It operates in DUAL GATE, ENHANCEMENT MODE for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a max Drain Current of 0.04 A and a Breakdown Voltage of 7 V, it is ideal for high-frequency circuit designs.

LOW NOISE

SOURCE

COMPLEX

7 V

.04 A

.04 A

METAL-OXIDE SEMICONDUCTOR

.05 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

2

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BG3430RE6327HTSA1 by Infineon Technologies

BG3430RE6327HTSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Drain Current (ID): .025 A; Package Shape: RECTANGULAR; Additional Features: LOW NOISE;

LOW NOISE

COMPLEX

12 V

.025 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G6

2

6

DUAL GATE, DEPLETION MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

BG5120KE6327HTSA1 by Infineon Technologies

BG5120KE6327HTSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G6; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

LOW NOISE

COMPLEX

12 V

.02 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G6

2

6

DUAL GATE, DEPLETION MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON