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BF999E6327HTSA1

Infineon Technologies

BF999E6327HTSA1 by Infineon Technologies

BF999E6327HTSA1 by Infineon Technologies is a RF Small Signal Field Effect Transistor (FET) with N-CHANNEL polarity. It operates in depletion mode and has a min DS breakdown voltage of 20V. This transistor is suitable for applications in the very high frequency band.

Median Price

$0.175

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,000 parts In-Stock

1+ parts

$0.166

100+ parts

$0.156

1k+ parts

$0.141

10k+ parts

$0.141

4,000

$0.166

$0.156

$0.141

$0.141

Verical

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.184

10k+ parts

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9,000

-

-

$0.184

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 836 parts In-Stock

1+ parts

$0.158

100+ parts

-

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836

$0.158

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Chip Stock

USA . 184,910 parts In-Stock

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184,910

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Vyrian

USA . 7,461 parts In-Stock

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7,461

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VNN

France . 3,560 parts In-Stock

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3,560

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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Ampacity Inc.

Singapore . 6,007 parts In-Stock

1+ parts

$0.141

100+ parts

-

1k+ parts

-

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6,007

$0.141

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Corphita

USA . 838 parts In-Stock

1+ parts

$0.149

100+ parts

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838

$0.149

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Corohmni

South Africa . 147 parts In-Stock

1+ parts

$0.408

100+ parts

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147

$0.408

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Aztec Data Supply Inc.

USA . 301 parts In-Stock

1+ parts

$0.594

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301

$0.594

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Modulus Dynamics

Lithuania . 16,536 parts In-Stock

1+ parts

$1.307

100+ parts

$1.255

1k+ parts

$1.202

10k+ parts

-

16,536

$1.307

$1.255

$1.202

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AZTECH Wire

Italy . 1,010 parts In-Stock

1+ parts

$13.310

100+ parts

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1,010

$13.310

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RC Electronics

USA . 81,000 parts In-Stock

1+ parts

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100+ parts

$0.210

1k+ parts

$0.200

10k+ parts

$0.190

81,000

-

$0.210

$0.200

$0.190

Perfect Parts

USA . 63,663 parts In-Stock

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63,663

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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25,000

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GreenTree Electronics

Israel . 9,000 parts In-Stock

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9,000

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QUARKTWIN TECHNOLOGY LTD

USA . 8,056 parts In-Stock

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8,056

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Continental Prestige Electronics

USA . 1,491 parts In-Stock

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1,491

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Argo Parts USA

USA . 512 parts In-Stock

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512

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Bastille Electronics

Australia . 10 parts In-Stock

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10

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Overview

Discover the BF999E6327HTSA1 by Infineon Technologies, a top-quality RF Small Signal Field Effect Transistor (FET) that brings unparalleled performance to your projects. With Infineon's reputation for excellence in manufacturing, this N-CHANNEL transistor offers reliability and durability like no other. Ideal for very high-frequency applications, this product is designed to deliver outstanding results. Its small outline package shape and gull-wing terminals make it easy to integrate into any project. Experience the advantage of cutting-edge technology and unleash the full potential of your designs with the BF999E6327HTSA1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and protection for the product, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

The N-CHANNEL configuration allows for efficient signal amplification and low power consumption, making it ideal for small signal applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, saving space and cost.

Surface Mount: YES

This surface mount capability enables easy and efficient PCB assembly, improving manufacturing efficiency.

Minimum DS Breakdown Voltage: 20 V

With a high minimum DS breakdown voltage, this transistor can handle higher voltages without breakdown, ensuring reliable performance and protection.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easy integration into various electronic systems and designs.

Terminal Form: GULL WING

The gull wing terminal form provides excellent solder joint strength and stability, contributing to the overall reliability of the product.

Operating Mode: DEPLETION MODE

The depletion mode operation allows for precise control and modulation of the transistor's characteristics, enhancing overall circuit performance.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

With its capability to operate in the very high frequency band, this transistor is suitable for applications requiring fast signal processing and high-frequency performance.

No. of Elements: 1

The single element design simplifies circuit layout and reduces complexity, making it easier to incorporate into various circuit designs.

No. of Terminals: 3

With three terminals, this transistor provides necessary connections for biasing and signal inputs, ensuring proper operation within the circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, allowing for compact designs and efficient use of available board real estate.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology ensures high-performance characteristics, such as low power consumption and reliable switching capabilities.

Transistor Element Material: SILICON

The silicon material used in the transistor element provides excellent reliability, temperature stability, and consistent performance over a wide range of operating conditions.

Terminal Finish: TIN

The tin terminal finish offers corrosion resistance, excellent solderability, and ease of rework, contributing to the product's long-term reliability.

Maximum Drain Current (ID): 0.03 A

The high maximum drain current capability of 0.03 A allows the transistor to handle significant current flows, making it suitable for various applications requiring high power amplification.

Terminal Position: DUAL

The dual terminal position provides flexibility in layout and connection options, making it easier to interface with other components or circuits.

Moisture Sensitivity Level (MSL): 1

With an MSL level of 1, this transistor is highly resistant to moisture-related issues, ensuring long-term reliability and stability in different environments.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF999E6327HTSA1 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Configuration:

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

BF999E6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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