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NE5550279A-T1-A

Renesas Electronics

NE5550279A-T1-A by Renesas Electronics

NE5550279A-T1-A by Renesas Electronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.6A Drain Current, and 6.25W Power Dissipation. It operates in ULTRA HIGH FREQUENCY BAND for RF applications like amplifiers due to its ENHANCEMENT MODE and MICROWAVE package style.

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2

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1k+

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Vyrian

USA . 13,155 parts In-Stock

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Nova Conductors

Japan . 650 parts In-Stock

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650

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$0.874

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$0.795

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$0.717

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350

$0.874

$0.795

$0.717

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Aztec Data Supply Inc.

USA . 84 parts In-Stock

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$1.790

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84

$1.790

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AZTECH Wire

Italy . 685 parts In-Stock

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$5.934

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685

$5.934

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Ampacity Inc.

Singapore . 548 parts In-Stock

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$31.050

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548

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Continental Prestige Electronics

USA . 4,573 parts In-Stock

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Argo Parts USA

USA . 3,814 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the NE5550279A-T1-A by Renesas Electronics. As a leading manufacturer in the industry, Renesas Electronics delivers top-quality RF Small Signal Field Effect Transistors that are perfect for a wide range of applications. Whether you're looking to enhance your electronic devices or improve your circuit designs, this N-CHANNEL transistor offers unmatched performance and reliability. Discover the value and benefits that Renesas Electronics brings to the table with the NE5550279A-T1-A, and elevate your projects to new heights of success.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors generally have higher electron mobility and lower on-resistance compared to P-CHANNEL transistors, making them more efficient for many applications.

Surface Mount: YES

Surface mount technology allows for easier and more compact integration onto circuit boards, saving space and making assembly more streamlined.

Minimum DS Breakdown Voltage: 30 V

A higher breakdown voltage ensures that the transistor can handle higher voltages without damage, increasing its reliability in various applications.

Package Shape: RECTANGULAR

Rectangular packages are common and easy to handle, making the transistor suitable for various mounting configurations.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are easier to control and typically exhibit lower leakage currents, making them more suitable for switching applications.

Maximum Drain Current (Abs) (ID): 0.6 A

With a maximum drain current of 0.6 A, this transistor can handle moderate power levels and is suitable for many low to medium power applications.

Maximum Power Dissipation Ambient: 6.25 W

The high maximum power dissipation allows the transistor to handle heat better, making it more reliable and suitable for high power applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand higher temperatures, making it suitable for a wide range of operating conditions.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) NE5550279A-T1-A attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

.6 A

Maximum Drain Current (ID):

.6 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-XQMW-F4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

MICROWAVE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

6.25 W

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

QUAD

Transistor Element Material:

SILICON

Trade Compliance

NE5550279A-T1-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Renesas Electronics

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