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NE5550279A-A

Renesas Electronics

NE5550279A-A by Renesas Electronics

NE5550279A-A by Renesas Electronics is a N-CHANNEL FET with 30V DS breakdown voltage, suitable for ULTRA HIGH-FREQUENCY applications. It operates in ENHANCEMENT MODE with 0.6A drain current and 6.25W power dissipation at max 150°C temperature, featuring a RECTANGULAR MICROWAVE package style.

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Overview

Elevate your RF small signal applications with the NE5550279A-A by Renesas Electronics. As a leading manufacturer in the industry, Renesas Electronics delivers top-quality N-CHANNEL FET transistors that offer unmatched performance and reliability. With its enhancement mode operation and ultra-high frequency capabilities, this single-configured transistor is designed to exceed expectations. Experience the benefits of a maximum drain current of 0.6 A, a minimum DS breakdown voltage of 30 V, and a maximum power dissipation of 6.25 W. Trust Renesas Electronics to provide cutting-edge technology and superior products for all your small signal needs.

Feature Benefit Bullets

Polarity or Channel Type

N-CHANNEL FETs are commonly used for low-side switching applications, making them versatile in various circuit designs.

Minimum DS Breakdown Voltage

A higher breakdown voltage ensures reliability and protection against voltage spikes, making this FET suitable for applications requiring high voltage handling capabilities.

Operating Mode

Enhancement mode FETs offer easier control over the switching operation compared to depletion mode FETs, allowing for efficient and precise circuit operation.

Maximum Power Dissipation Ambient

With a high power dissipation rating, this FET can handle significant power without overheating, ensuring stable performance under demanding conditions.

Maximum Operating Temperature

The ability to operate at up to 150°C allows this FET to be used in high-temperature environments without performance degradation, making it reliable in various applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) NE5550279A-A attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

.6 A

Maximum Drain Current (ID):

.6 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-XQMW-F4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

MICROWAVE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

6.25 W

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

QUAD

Transistor Element Material:

SILICON

Trade Compliance

NE5550279A-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Renesas Electronics

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